Fall time

About: Fall time is a research topic. Over the lifetime, 1019 publications have been published within this topic receiving 9038 citations.

Differential pulse-width pair BOTDA for high spatial resolution sensing

Abstract: A differential pulse-width pair Brillouin optical time domain analysis (DPP-BOTDA) for centimeter spatial resolution sensing using meter equivalent pulses is proposed. This scheme uses the time domain waveform subtraction at the same scanned Brillouin frequency obtained from pulse lights with different pulse-widths (e.g. 50ns and 49ns) to form the differential Brillouin gain spectrum (BGS) at each fiber location. The spatial resolution is defined by the average of the rise and fall time equivalent fiber length for a small stress section rather than the pulse-width difference equivalent length. The spatial resolution of 0.18m for the 50/49ns pulse pair and 0.15m for 20/19ns pulse pair over 1km sensing length with Brillouin frequency shift accuracy of 2.6MHz are demonstrated.

Energy efficient, laser-based method and system for processing target material

Abstract: An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a laser amplifier for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses. The amplified pulses have little distortion and have substantially the same relative temporal power distribution as the original pulse train from the laser. Each of the amplified pulses has a substantially square temporal power density distribution, a sharp rise time, a pulse duration and a fall time. The system further includes a beam delivery and focusing subsystem for delivering and focusing at least a portion of the amplified pulse train onto the target material. The rise time (less than about 1 ns) is fast enough to efficiently couple laser energy to the target material, the pulse duration (typically 2-10 ns) is sufficient to process the target material, and the fall time (a few ns) is rapid enough to prevent the undesirable changes to the material surrounding the target material.

A sub-micron depletion-type photonic modulator in Silicon On Insulator.

Abstract: We provide detailed analysis of a four terminal p+pnn+ optical modulator integrated into a silicon-on-insulator (SOI) rib waveguide. The proposed depletion device has been designed to approach birefringence free operation. The modulation mechanism is the carrier depletion effect in a pn junction; carrier losses induced are minimised in our design and because we use a depletion device, the device is insensitive to carrier lifetime. The rise time and fall time of the proposed device have both been calculated to be 7 ps for a reverse bias of only 5 volts. A maximum excess loss of 2 dB is predicted for TE and TM due to the presence of p type and n type carriers in the waveguide.

Fast organic thin-film transistor circuits

Abstract: We have fabricated organic thin-film transistors and integrated circuits using pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam sputtered silicon dioxide as the gate dielectric and a double-layer photoresist process to isolate devices. These transistors have carrier mobility near 0.5 cm/sup 2//V-s and on/off current ratio larger than 10/sup 7/. Using a level-shifting design that allows circuits to operate over a wide range of threshold voltages, we have fabricated ring oscillators with propagation delay below 75 /spl mu/s per stage, limited by the level-shifting circuitry. When driven directly, inverters without level shifting show submicrosecond rise and fall time constants.

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Abstract: We present a 1 Mpixel single-photon avalanche diode camera featuring 3.8 ns time gating and 24 kfps frame rate, fabricated in 180 nm CMOS image sensor technology. We designed two pixels with a pitch of 9.4 µm in 7 T and 5.75 T configurations respectively, achieving a maximum fill factor of 13.4%. The maximum photon detection probability is 27%, median dark count rate is 2.0 cps, variation in gating length is 120 ps, position skew is 410 ps, and rise/fall time is ${ \lt }{550}\;{\rm ps}$<550ps, all FWHM at 3.3 V excess bias. The sensor was used to capture 2D/3D scenes over 2 m with resolution (least significant bit) of 5.4 mm and precision better than 7.8 mm (rms). We demonstrate extended dynamic range in dual exposure operation mode and show spatially overlapped multi-object detection in single-photon time-gated time-of-flight experiments.