Topic
Femtosecond
About: Femtosecond is a research topic. Over the lifetime, 35106 publications have been published within this topic receiving 691405 citations. The topic is also known as: 1 E-15 s & fs.
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TL;DR: The method consists of irradiating silicon wafers with femtosecond laser pulses and then coating the surfaces with a layer of fluoroalkylsilane molecules, which creates a surface morphology that exhibits structure on the micro- and nanoscale.
Abstract: We present a simple method for fabricating superhydrophobic silicon surfaces. The method consists of irradiating silicon wafers with femtosecond laser pulses and then coating the surfaces with a layer of fluoroalkylsilane molecules. The laser irradiation creates a surface morphology that exhibits structure on the micro- and nanoscale. By varying the laser fluence, we can tune the surface morphology and the wetting properties. We measured the static and dynamic contact angles for water and hexadecane on these surfaces. For water, the microstructured silicon surfaces yield contact angles higher than 160° and negligible hysteresis. For hexadecane, the microstructuring leads to a transition from nonwetting to wetting.
415 citations
TL;DR: In this article, the authors review the mechanisms of and techniques for bulk modification of transparent materials using femtosecond laser pulses and discuss the fabrication of photonic and other structures in transparent materials, including waveguides, couplers, gratings, diffractive lenses, optical data storage and microfluidic channels.
Abstract: When a femtosecond laser pulse is focused inside a transparent material, the optical intensity in the focal volume can become high enough to induce permanent structural modifications such as a refractive index change or the formation of a small vacancy. Thus, one can micromachine structures inside the bulk of a transparent material in three dimensions. We review the mechanisms of and techniques for bulk modification of transparent materials using femtosecond laser pulses and discuss the fabrication of photonic and other structures in transparent materials, including waveguides, couplers, gratings, diffractive lenses, optical data storage, and microfluidic channels.
413 citations
TL;DR: This pulsed electron emitter, triggered by a femtosecond oscillator, could serve as an efficient source for time-resolved electron interferometry, for time -resolved nanometric imaging and for synchrotrons.
Abstract: We report a source of free electron pulses based on a field emission tip irradiated by a low-power femtosecond laser. The electron pulses are shorter than 70 fs and originate from a tip with an emission area diameter down to 2 nm. Depending on the operating regime we observe either photofield emission or optical field emission with up to 200 electrons per pulse at a repetition rate of 1 GHz. This pulsed electron emitter, triggered by a femtosecond oscillator, could serve as an efficient source for time-resolved electron interferometry, for time-resolved nanometric imaging and for synchrotrons.
412 citations
TL;DR: In this paper, the amplitude and phase of the electromagnetic radiation from the semiconductor surfaces depend on carrier mobility, impurity doping concentration, and strength and polarity of the static internal field.
Abstract: The basic concepts and preliminary applications of optically induced electromagnetic radiation from semiconductor surfaces and interfaces by using femtosecond optics are discussed. This submillimeter‐wave radiation provides a novel optoelectronic technique to study semiconductor electronic surface and interface properties with a contactless approach. The amplitude and phase of the electromagnetic radiation from the semiconductor surfaces depend on carrier mobility, impurity doping concentration, and strength and polarity of the static internal field. A large selection of bulk, epitaxial layer and superlattice samples from III‐V, II‐VI and group‐IV semiconductors has been tested. The orientation and strength of the static built‐in fields of a wide range of semiconductor surfaces, such as surface depletion, metal/semiconductor Schottky, p‐n junction and strain‐induced piezoelectric fields, can be determined and estimated.
412 citations
TL;DR: In this paper, the central frequency of the transients is continuously tunable over a wide interval extending from 41 THz (λ = 7μm) to the far-infrared.
Abstract: Bandwidth-limited infrared pulses as short as 50 fs are generated in thin GaSe crystals by phase-matched optical rectification of 10 fs laser pulses. The central frequency of the transients is continuously tunable over a wide interval extending from 41 THz (λ=7 μm) to the far-infrared. The electric field of the THz transients is directly monitored via ultrabroadband free-space electro-optic sampling. A simulation of the spectra based on a plane-wave model shows excellent agreement with the experiment.
407 citations