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Fermi level

About: Fermi level is a research topic. Over the lifetime, 27191 publications have been published within this topic receiving 652441 citations.


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Journal ArticleDOI
TL;DR: In this article, the authors focus on the origin of the D and G peaks and the second order of D peak and show that the G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers.

6,496 citations

Journal ArticleDOI
TL;DR: In this paper, a compilation of all published measurements of electron inelastic mean free path lengths in solids for energies in the range 0-10 000 eV above the Fermi level is presented.
Abstract: A compilation is presented of all published measurements of electron inelastic mean free path lengths in solids for energies in the range 0–10 000 eV above the Fermi level. For analysis, the materials are grouped under one of the headings: element, inorganic compound, organic compound and adsorbed gas, with the path lengths each time expressed in nanometers, monolayers and milligrams per square metre. The path lengths are vary high at low energies, fall to 0.1–0.8 nm for energies in the range 30–100 eV and then rise again as the energy increases further. For elements and inorganic compounds the scatter about a ‘universal curve’ is least when the path lengths are expressed in monolayers, λm. Analysis of the inter-element and inter-compound effects shows that λm is related to atom size and the most accuratae relations are λm = 538E−2+0.41(aE)1/2 for elements and λm=2170E−2+0.72(aE)1/2 for inorganic compounds, where a is the monolayer thickness (nm) and E is the electron energy above the Fermi level in eV. For organic compounds λd=49E−2+0.11E1/2 mgm−2. Published general theoretical predictions for λ, valid above 150 eV, do not show as good correlations with the experimental data as the above relations.

4,486 citations

Journal ArticleDOI
TL;DR: The band structure of Mn-based Heusler alloys of the crystal structure (MgAgAs type) has been calculated with the augmented-spherical-wave method.
Abstract: The band structure of Mn-based Heusler alloys of the $C{1}_{b}$ crystal structure (MgAgAs type) has been calculated with the augmented-spherical-wave method. Some of these magnetic compounds show unusual electronic properties. The majority-spin electrons are metallic, whereas the minority-spin electrons are semiconducting.

3,851 citations

Journal ArticleDOI
10 Jul 2009-Science
TL;DR: The results establish that Bi2Te3 is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface, and points to promising potential for high-temperature spintronics applications.
Abstract: Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi2Te3 with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi2Te3 is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi2Te3 also points to promising potential for high-temperature spintronics applications.

2,823 citations

Journal ArticleDOI
S. Cahangirov1, Mehmet Topsakal1, Ethem Aktürk1, Hasan Sahin1, Salim Ciraci1 
TL;DR: In this paper, first-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures.
Abstract: First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their pi and pi(*) bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.

2,624 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023382
2022825
2021957
20201,032
20191,056
20181,029