Ferromagnetism

Abstract: Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

Abstract: It is rigorously proved that at any nonzero temperature, a one- or two-dimensional isotropic spin-$S$ Heisenberg model with finite-range exchange interaction can be neither ferromagnetic nor antiferromagnetic. The method of proof is capable of excluding a variety of types of ordering in one and two dimensions.

Abstract: Recently, Jonker and Van Santen have found an empirical correlation between electrical conduction and ferromagnetism in certain compounds of manganese with perovskite structure. This observed correlation is herein interpreted in terms of those principles governing the interaction of the $d$-shells of the transition metals which were enunciated in the first paper of this series. Both electrical conduction and ferromagnetic coupling in these compounds are found to arise from a double exchange process, and a quantitative relation is developed between electrical conductivity and the ferromagnetic Curie temperature.

Abstract: REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.

Abstract: A thermodynamic theory of “weak” ferromagnetism of α-Fe 2 O 3 , MnCO 3 and CoCO 3 is developed on the basis of landau's theory of phase transitions of the second kind. It is shown that the “weak” ferromagnetism is due to the relativistic spin-lattice and the magnetic dipole interactions. A strong dependence of the properties of “weak” ferromagnetics on the magnetic crystalline symmetry is noted and the behaviour of these ferromagnetics in a magnetic field is studied.