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FET amplifier

About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.


Papers
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Patent
28 Oct 1988
TL;DR: In this article, a low-power crystal-controlled CMOS oscillator with a long and wide additional transistor is provided in the first stage of the output amplifier to prevent it from diverting too much current from the primary amplifier stage during start-up.
Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during start-up.

27 citations

Journal ArticleDOI
TL;DR: In this article, a complementary logic device consisting of two types of devices, namely, parallel and antiparallel spin transistors, was proposed, in which the alignments of the magnetization directions of the source and the drain electrodes are parallel or antip-arallel, respectively.
Abstract: The spin-FET has been realized using a semiconductor channel, but two complementary transistors analogous to n- and p-type of the conventional charge transistors have not yet been developed. We propose a complementary logic device consisting of two types of devices, namely, parallel and antiparallel spin transistors, in which the alignments of the magnetization directions of the source and the drain electrodes are parallel or antiparallel, respectively. Only one of the two transistors is conducting at a given gate voltage. An assessment of the feasibility was carried out by performing logic gate simulations based on the experimental spin transistor parameters.

27 citations

Patent
21 Mar 1958

27 citations

Patent
24 Aug 2012
TL;DR: In this article, the driver-stage amplifier is fabricated on a silicon substrate and the final stage amplifier on a gallium arsenide substrate, while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on the same substrate.
Abstract: A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1 , and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7 . The driver-stage amplifier 3 is fabricated on a silicon substrate 11 , while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.

27 citations

Patent
28 May 1962

27 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231
20227
20211
20202
20193
20184