Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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Patent•
30 May 1989
TL;DR: In this article, a load current control FET is provided for controlling the current in this load, which is produced by a diode OR circuit, which outputs a logic OR of the logic signals inputted into the respective input terminals.
Abstract: An inverter portion, which is to be basic logic circuit, includes switching FETs corresponding to input terminals and a load FET. A logic signal inputted into each of the input terminals drives each corresponding switching FET, thereby to output a prescribed logic signal from an output terminal. Further, a load for restricting a current flowing in the load FET is connected between the gate and the source of the load FET. In addition, a load current control FET is provided for controlling the current in this load. A gate potential of the load current control FET is produced by a diode OR circuit. The diode OR circuit outputs a logic OR of the logic signals inputted into the respective input terminals, and supplies it to the gate of the load current control FET as a load current control signal.
26 citations
Patent•
IBM1
TL;DR: In this paper, a field effect transistor (FET) memory array with cross-coupled FETs is described, and stability is achieved by conditioning the load FET devices into partial conduction during the stand-by state of the memory cell.
Abstract: Disclosed is a field effect transistor (FET) memory array in which each of the cells forming the array comprises four FET's. The first and second of the four FET devices are cross-coupled while the third and fourth FET devices form loads for the cross coupled pair. D.C. stability is achieved by conditioning the load FET devices into partial conduction during the stand-by state of the memory cell.
26 citations
Patent•
26 May 1981TL;DR: In this article, the threshold voltage control circuit includes a reference (FET) which is electrically connected to the other FETs so that threshold voltage of the reference FET determines the threshold voltages of the other fETs.
Abstract: A threshold voltage control circuit controls the threshold voltages of one or more field-effect transistors (FETs) of an integrated circuit. The threshold voltage control circuit includes a reference (FET) which is electrically connected to the other FETs so that the threshold voltage of the reference FET determines the threshold voltages of the other FETs. A bias voltage is applied to a gate of the reference FET and a current path is established between first and second supply terminals. This current path includes the drain and source of the reference FET. The current flowing in the current path is a function of the bias voltage applied to the gate of the reference FET and the threshold voltage of the reference FET. A high gain, high input impedance amplifier is connected to the current path and provides a threshold control signal to the reference FET (and the other FETs) which is a function of the current in the current path. The threshold control signal causes the threshold voltage of the reference FET to attain a value which maintains a predetermined current flow in the current path.
26 citations
Patent•
14 Jun 1993TL;DR: In this article, a closed-loop linear automatic gain control (AGC) circuit that has independent means for temperature compensation was proposed, where the temperature compensation signal was coupled to one of the two gates in a field effect transistor (FET) amplifier to maintain a constant gain function over ranges of temperature, frequency and load impedance.
Abstract: A high dynamic range linear automatic gain control (AGC) circuit that has independent means for temperature compensation. The temperature compensation circuit of this invention can be used in a closed-loop AGC circuit such as is required in a transceiver for compensating the gains of receiver and transmitter amplifiers (16, 18) to ensure that both track closely over ranges of temperature, frequency and load impedance. The temperature compensation signal is coupled to one of the two gates in a field effect transistor (FET) amplifier to maintain a constant gain function over ranges of temperature, frequency and load impedance. Thermal compensation for the transmitter amplifier (18) is derived from the thermal compensation signal (28) for the receiver amplifier (16).
26 citations
Patent•
07 Apr 1999TL;DR: In this paper, an input matching circuit is provided having the output impedance-frequency characteristics, where output impedance shows a value approximately equal to that of the gate input impedance of the FET at the frequency of the objective signal to be amplified.
Abstract: An input matching circuit is provided having the output impedance-frequency characteristics wherein the output impedance shows a value approximately equal to that of the gate input impedance of the FET at the frequency of the objective signal to be amplified, and the output impedance shows a value not more than twice the gate input impedance of the FET at least at the entire frequencies from the frequency of the objective signal to be amplified through twice the frequency of the objective signal to be amplified so that the matching between the input previous stage circuit and the gate of the FET can be secured. Thereby, a high-frequency power amplifier circuit and a high-frequency power amplifier module, which can suppress the occurrence of distortion, perform stably, and get miniaturized, are configured.
26 citations