Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
Papers published on a yearly basis
Papers
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31 Jul 1987TL;DR: In this article, a semiconductor switching circuit consisting of an output FET receiving a photovoltaic output generated by a diode array responsive to a light signal from a light emitting element is presented.
Abstract: of the Disclosure A semiconductor switching circuit comprises an output FET receiving a photovoltaic output generated by a diode array responsive to a light signal from a light emitting element, a depression mode driving FET connected at the drain and source to the gate and source of the output FET, and a constantvoltage conduction element connected in parallel with a resistor connected across the gate and source of the driving FET. The sensitivity of the circuit is elevated by setting the value of this resistor relatively high, whereas the high speed operation can be assured by having discharge current of an accumulated charge across the drain and gate of the output FET bypassed through the resistor.
25 citations
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TL;DR: In this article, a feedback power amplifier using miniaturized microwave active circuit (MMAC) technology was developed for satellite C-band applications, which demonstrated that strong negative feedback can be implemented in the microwave frequencies to improve amplifier linearity and output power over a 750 MHz bandwidth.
Abstract: A feedback power amplifier using miniaturized microwave active circuit (MMAC) technology was developed for satellite C-band applications. This design demonstrates that a strong negative feedback can be implemented in the microwave frequencies to improve amplifier linearity and output power over a 750 MHz bandwidth. The amplifier provides a third-order intermodulation distortion improvement of 7 to 9 dB across the band at backoff, compared to results obtained using the conventional approach without feedback. The theory, proof-of-concept experiment, design, and MMAC implementation of the feedback amplifier are presented. >
25 citations
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26 Oct 2009TL;DR: In this paper, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform, which can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation.
Abstract: In a portable radio transceiver, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform. The saturation detection output signal can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation.
25 citations
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25 Sep 2008
TL;DR: In this article, a switching circuit for preventing malfunction of a switching device formed of a wide band-gap semiconductor used for switching a high-power main power supply includes a normally off type FET having a gate electrode, a source electrode connected to the ground, and a drain and source electrodes connected to a power supply potential Vdd.
Abstract: A switching circuit for preventing malfunction of a switching device formed of a wide band-gap semiconductor used for switching a high-power main power supply includes a normally-off type FET having a gate electrode, a source electrode connected to the ground, and a drain electrode connected to a power supply potential Vdd, and a normally-on type FET having drain and source electrodes connected to the gate and source electrodes of the FET, respectively, and a gate electrode. In the absence of any power supply, the normally-on type FET turns on. As a result, the gate/source potential of FET attains to 0V, and FET is kept off.
25 citations
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28 Apr 1983TL;DR: In this article, the drain resistance of the FET is adjusted to induce leakage current across the gate-source junction when excessive power levels are imposed on the gate, which does not affect the sensitivity or bandwith performance of the amplifier.
Abstract: A simple method for increasing the dynamic range of a GaAs FET amplifier. The drain resistance (RD) of the FET is adjusted to induce leakage current across the gate-source junction when excessive power levels are imposed on the gate. This current shunt (IS) is provided without added circuit components and therefore does not affect the sensitivity or bandwith performance of the amplifier.
25 citations