Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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22 May 1994
TL;DR: In this paper, a suitable and effective design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed, and an analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design.
Abstract: A suitable and effective design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. An analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best trade-offs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operation. >
24 citations
Patent•
30 May 1991TL;DR: An amplifier of the present invention is suitable for use as sense amplifier in memories as discussed by the authors, and a memory using the amplifier is also provided, but it is not available in this paper.
Abstract: An amplifier of the present invention is suitable for use as sense amplifier in memories. Some embodiments of the amplifier are simple, fast and consume little power. A memory using the amplifier is also provided.
24 citations
Patent•
31 Aug 1976TL;DR: In this paper, a complementary inverter amplifier circuit is proposed, consisting of a p-channel MIS FET connected to a first source potential and an n-channel FET connecting to a second source potential, the gate of the two FETs being applied with a common linear input, respective load resistors connected to the drains of the complementary FET, an output being derived from the interconnection point of the load resistor or from the drain of the FET.
Abstract: A complementary inverter amplifier circuit comprising a complementary inverter including a p-channel MIS FET connected to a first source potential, an n-channel MIS FET connected to a second source potential, the gate of the two FETs being applied with a common linear input, respective load resistors connected to the drains of the complementary FETs, an output being derived from the interconnection point of the load resistors or from the drains of the FETs, and a bias resistor connected between the gate and the drain of each of the complementary FETs, the input being supplied to the gates of the FETs through respective capacitors. The p-channel FET and n-channel FET are individually biased so that the circuit may serve as a class B push pull amplifier of low power consumption.
24 citations
Patent•
18 Jun 1981
TL;DR: In this paper, a three-terminal MOSFET is used as an electrical analog of a unidirectional mechanical valve to conduct current whenever the voltage from the drain to the source exceeds a threshold value, and will effectively act as an open circuit whenever the drain-to-source voltage is less than this threshold.
Abstract: A device suitable for use as an electrical analog of a unidirectional mechanical valve includes a three-terminal MOSFET. A sensing comparator has inputs coupled to the drain and source terminals of the FET, and an output coupled to the gate of the FET. A floating power supply allows the analog to operate independently of the circuit in which it is used. The FET will conduct current whenever the voltage from the drain to the source exceeds a threshold value, and will effectively act as an open circuit whenever the drain to source voltage is less than this threshold.
24 citations
TL;DR: In this paper, a current measuring system capable of detecting single ions is described, which operates at a frequency of nominally 900 kHz and utilizes a superconducting inductor with high Q(Q≊8500) and a cryogenic GaAs field effect transistor (FET) amplifier with noise temperature less than 03 K.
Abstract: A current measuring system capable of detecting single ions is described The detector operates at a frequency of nominally 900 kHz and utilizes a superconducting inductor with high Q(Q≊8500) and a cryogenic GaAs field‐effect transistor (FET) amplifier with noise temperature less than 03 K Noise measurements of the FET are presented along with details of the construction of the superconducting inductor
24 citations