FET amplifier

About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.

300 GHz InP HBT amplifier with 10 mW output power

Abstract: A high-power terahertz solid-state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.

Power amplifier, power amplifying method and radio communication apparatus

Abstract: It is difficult that the impedance of the circuit part on the output side of an amplifying element at the frequency of a modulating wave is lower, and consequently, it is difficult to more effectively use the linearity of the amplifying element. The phase of a signal of the frequency of the modulating wave included in an amplified signal output from a FET is inverted by a difference frequency inverting circuit. The inverted signal of the frequency of the modulating wave and a signal of the frequency of a modulated wave included in an amplified signal output from a FET cancel each other out at the drain of the FET. At the drain end of the FET, the signal of the frequency of the modulating wave included in the amplified signal of the FET and a signal of the frequency of the modulating wave output from the FET cancel each other out.

InAs HEMT narrowband amplifier with ultra-low power dissipation

Abstract: The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RT/Duroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4% in S-band and dissipates a total power of only 365 /spl mu/W.

Distributed fet amplifier and bias voltage supply circuit therefor

Abstract: A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

Wide-dynamic-range variable-gain amplifier

Abstract: A very-wide-dynamic-range amplifier with very low-noise in the high-gain mode and very high-input-overload in the low-gain mode. The amplifier utilizes two parallel signal paths, one a high-gain, low-noise path and the other a low-gain, high-input-overload path. Each path includes a gain-control capability so that the gain of each path, and the contribution of the gain of each path to the overall gain of the amplifier may be smoothly varied from a very low-gain to a very high-gain. Specific embodiments including input impedance matching capabilities are disclosed.