FET amplifier

About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.

Multi-mode multi-band power amplifiers

Abstract: Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.

Radio frequency signal output module having radio-frequency power amplifier and isolator element

Abstract: A radio frequency signal output module having a power amplifier and an isolator element is provided in which a radio-frequency output stage can be largely reduced in size and thickness The radio frequency signal output module comprises a dielectric multilayer substrate; a radio-frequency power amplifier circuit; an isolator element; an impedance matching circuit which is inserted and connected between the radio-frequency power amplifier circuit and the isolator element; and a feedback loop for controlling the gain of the radio-frequency power amplifier circuit The radio-frequency power amplifier circuit, the isolator element, the impedance matching circuit, and the feedback loop are integrally mounted on the dielectric multilayer substrate, and the feedback loop is branched from the impedance matching circuit, and connected to the radio-frequency power amplifier circuit

Self regenerative fast gate turn-off FET

Abstract: A fast turn-off FET circuit is provided by regeneratively coupled bipolar transistors in the gate circuit of the FET which are driven into latched conduction by residual charge in the gate to source capacitance of the FET upon turn-off of the latter due to removal of gate drive. The regeneratively coupled bipolar transistors remain in latched conduction until the FET gate charge is depleted. Conduction of the bipolar transistors provides faster discharge therethrough of the FET gate, whereby to facilitate faster FET turn-off without reverse gating current and its attendant auxiliary power supply.

SIS Mixer to HEMT Amplifier Optimum Coupling Network (Short Paper)

Abstract: The coupling network between a superconductor-insulator-superconductor (SIS) mixer and a high-electron-mobility-transistor (HEMT) amplifier is investigated from the point of view of minimizing the overall noise temperature and also increasing the saturation level of the mixer. The effect of a negative output impedance of the mixer upon the amplifier noise is considered and an optimum negative source resistance is found. The amplifier noise at this optimum negative source resistance is shown to be related to the noise wave coming out of the amplifier input terminals. Key words: SIS, HEMT, low-noise, negative resistance.