Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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TL;DR: A new concept of pulsed load modulation (PLM) is introduced for efficient power amplification that allows the power amplifier to maintain maximum efficiency until the output power of the amplifier is backed off by 6 dB.
Abstract: A new concept of pulsed load modulation (PLM) is introduced for efficient power amplification. The proposed technique allows the power amplifier (PA) to maintain maximum efficiency until the output power of the amplifier is backed off by 6 dB. The PLM amplifier contains two pulse-biased PAs connected with a lambda/4 transmission line and a high- Q bandpass resonator. For maximum efficiency and linearity, the load impedance of the amplifier is digitally modulated using the switched-resonator concept. A prototype amplifier is implemented using two PAs and a diplexer for the 1.87-GHz band. The measured efficiency of the amplifier at peak output power is 51%. Compared with 25.5% of the conventional class-B amplifier, the PLM amplifier obtains an improved efficiency of 38% at 6-dB output power back-off.
20 citations
Patent•
06 Jul 2013TL;DR: In this paper, a compensation circuit is configured to compensate a nonlinearity effect generated by the at least one field effect transistor (FET) disposed between a first node and a second node, each FET having a source, drain, gate, and body.
Abstract: Radio-frequency (RF) switch circuits providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a source, drain, gate, and body. A compensation circuit is connected to the respective source of the at least one FET. The compensation circuit may be configured to compensate a non-linearity effect generated by the at least one FET.
20 citations
Patent•
12 Feb 2009TL;DR: In this article, the authors present a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption, which includes a transconductance amplifier, a transformer, and a multiplier.
Abstract: The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
20 citations
TL;DR: In this article, the authors describe a 430 MHz magnetometer with varactor control, in which both the resonant frequency of the SQUID tank circuit and the input/output impedances of the following 4.2 K GaAs FET amplifier are varactor controlled.
Abstract: We describe a 430‐MHz SQUID magnetometer in which both the resonant frequency of the SQUID tank circuit and the input/output impedances of the following 4.2 K GaAs FET amplifier are varactor controlled. The intrinsic energy sensitivity of the magnetometer, in full flux lock from dc to 5 MHz, is 6.8×10−32 J/Hz (≡4×10−6Φ0/√Hz flux sensitivity). The figure of merit is 2.1×10−31 J/Hz.
20 citations
Patent•
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TL;DR: In this article, a differential amplifier is connected to a push-pull-type source follower circuit that receives biphase signals, and a diode or a resistor connects the source terminals of the first and second current source FETs to a voltage source.
Abstract: A differential amplifier is connected to a push-pull-type source follower circuit that receives biphase signals The source follower circuit has a first set of FETs including a first source follower FET and a first current source FET and a second set of FETs including a second source follower FET and a second current source FET A first coupling capacitance element connects the first current source FET and the second source follower FET, and a second coupling capacitance element connects the second current source FET and the first source follower FET A diode or a resistor connects the source terminals of the first and second current source FETs to a voltage source
20 citations