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FET amplifier

About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.


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Journal ArticleDOI
TL;DR: In this paper, a high-current, wide-band transconductance amplifier is described that provides an unprecedented level of output current at high frequencies with exceptional stability. But the amplifier design is based on the principle of paralleling a number of precision bipolar voltage-to-current converters.
Abstract: A high-current, wide-band transconductance amplifier is described that provides an unprecedented level of output current at high frequencies with exceptional stability It is capable of converting a signal voltage applied to its input into a ground-referenced output rms current up to 100 A over a frequency range from DC to 100 kHz with a useable frequency extending to 1 MHz The amplifier has a 1000-W output capability /spl plusmn/10 V of compliance, and can deliver up to 400 A of pulsed peak-to-peak current The amplifier design is based on the principle of paralleling a number of precision bipolar voltage-to-current converters The design incorporates a unique ranging system controlled by opto-isolated switches, which permit a full-scale range from 5 A to 100 A The design considerations for maintaining wide bandwidth, high output impedance, and unconditional stability for all loads are discussed

20 citations

Proceedings ArticleDOI
20 May 2014
TL;DR: In this paper, a new ultra-low power fully recycling folded cascode amplifier with low supply voltage is presented, which benefits from higher transconductance, slew rate and gain in comparison with conventional recycling folded cascade.
Abstract: A new ultra-low power fully recycling folded cascode amplifier with low supply voltage is presented. The new configuration benefits from higher transconductance, slew rate and gain in comparison with conventional recycling folded cascode. Furthermore, the phase-margin is enhanced and the input referred noise is reduced in this new configuration. Simulation results in standard 0.18 μm CMOS technology shows that the proposed amplifier achieves 316% improvement in gain bandwidth and 11 dB boosts in DC gain in comparison with the conventional folded cascode amplifier. The amplifier consumes 240nW @ 0.6 V which make it suitable for low-power biomedical applications.

20 citations

Patent
28 Dec 1993
TL;DR: In this paper, a two-stage power amplifier device for use in a digital hand-held radiophone includes a first and a second amplifier circuit, where the first amplifier is an exciter-stage amplifier for receiving a high-frequency input signal corresponding to a modulation signal to generate an amplified signal at its output.
Abstract: A two-stage power amplifier device for use in a digital hand-held radiophone includes a first and a second amplifier circuit. The first amplifier is an exciter-stage amplifier for receiving a high-frequency input signal corresponding to a modulation signal to generate an amplified signal at its output. The second amplifier is a final-stage amplifier connected to either the input signal or the output of the exciter amplifier. A detector circuit is connected to the exciter amplifier, for monitoring variations in a bias current to be fed to the exciter amplifier, and for generating a detection signal indicative of the current variation thus detected. A linearizer circuit is connected to the detector and the final-stage amplifier. The linearizer is responsive to the detection signal, for forcing a bias voltage given to the final-stage amplifier to vary in potential while causing the bias voltage to remain in a univocally determinable relationship with a waveform of said input signal, to thereby increase the linearity of the final-stage amplifier.

19 citations

Proceedings ArticleDOI
20 May 2001
TL;DR: In this article, a CMOS power amplifier for the GSM-1800 standard, with only two external matching components and a few decoupling capacitors, was presented, which is comparable to commercially available power amplifiers in other technologies.
Abstract: Until recently it was the common opinion that CMOS RF power amplifiers were not feasible for mobile handsets. This paper presents a CMOS power amplifier for the GSM-1800 standard, with only two external matching components and a few decoupling capacitors. The performance of the power amplifier is better than any other CMOS power amplifier reported and comparable to commercially available power amplifiers in other technologies.

19 citations

Patent
21 Dec 2005
TL;DR: In this article, an amplifier consisting of an H-bridge with two halves and two inductors is coupled to the H-bridges, and each inductor is configured as a boost converter.
Abstract: An amplifier is provided. The amplifier comprises an H-bridge with two halves. A capacitor and two inductors are coupled to the H-bridge. Each inductor, a half of the H-bridge, and the capacitor are configured as a boost converter.

19 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231
20227
20211
20202
20193
20184