Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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Patent•
29 Jun 1994TL;DR: In this paper, a device which may protect circuits or equipment from overload or transients is described, which includes a unit (5) consisting of a p-channel FET and an n-channel fET connected with their conductive channels in series and each transistor coupled to the drain terminal of the other.
Abstract: A device which may protect circuits or equipment from overload or transients is disclosed. The device includes a unit (5) consisting of a p-channel FET (7) and an n-channel FET (6) connected with their conductive channels in series and the gate of each transistor coupled to the drain terminal of the other.
56 citations
TL;DR: In this paper, a Doherty power amplifier with post-distortion linearization at the millimeter-wave (MMW) frequency band was presented, achieving a small signal gain of 7dB from 38 to 46 GHz with a small chip size of 2mm2.
Abstract: This letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-mum GaAs HEMT process, achieves a small signal gain of 7dB from 38 to 46GHz with a compact chip size of 2mm2. The saturation output power of the Doherty amplifier is 21.8dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18dB at 42GHz compared with the balanced amplifier operation
56 citations
Patent•
20 May 1993TL;DR: In this article, a method for fabricating low leakage current bipolar junction transistors of silicon-on-sapphire for efficient use in operational amplifiers utilizes all implant technology, improved silicon conditioning processing, and low temperature annealing.
Abstract: A method for fabricating low leakage current bipolar junction transistors of silicon-on-sapphire for efficient use in operational amplifiers utilizes all implant technology, improved silicon conditioning processing, and low temperature annealing.
56 citations
TL;DR: In this paper, a design consideration for an X-band GaAs power FET, features of the fabrication process, and electrical characteristics of the FET are described, and the resulting devices can produce 0.7-W and 1.6-W saturation output power at 10 GHz and 8 GHz, respectively.
Abstract: A design consideration for an X-band GaAs power FET, features of the fabrication process, and electrical characteristics of the FET are described. Interdigitated 53 source and 52 drain electrodes and an overlaid gate electrode for connecting 104 Schottky gates in parallel have been introduced to achieve a 1.5-µm-long and 5200-µm-wide gate FET. A sheet grounding technique has been developed in order to minimize the common source lead inductance (L 8 = 50 pH). The resulting devices can produce 0.7-W and 1.6-W saturation output power at 10 GHz and 8 GHz, respectively. At 6 GHz, a linear gain of 7 dB, an output power of 0.85 W at 1-dB gain compression and 30-percent power added efficiency can be achieved. The intercept point for third-order intermodulation products is 37.5 dBm at 6.2 GHz.
55 citations
TL;DR: In this article, a low noise three-stage pseudomorphic high electron mobility field effect transistors amplifier was designed for the temperature range below 1 K. The gain of the amplifier was 50 at a power consumption of about 200 μW.
Abstract: Low noise three-stage pseudomorphic high electron mobility field-effect transistors amplifier were designed for the temperature range below 1 K. A minimum noise temperature TN≈100 mK was measured at an ambient temperature of about 380 mK at frequencies between 1 and 4 MHz for a source resistance of 10 kΩ. The gain of the amplifier was 50 at a power consumption of about 200 μW. The noise parameters of the amplifier are stable to within 30%, for a power consumption in the range of 100–300 μW. Minimum voltage spectral noise density of the amplifier with respect to the input is about 200 pV/Hz1/2 and the corner frequency of the 1/f noise is close to 300 kHz.
55 citations