FET amplifier

About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.

Radio frequency (rf) power amplifier and rf power amplifier apparatus

Abstract: An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

Integration circuit including a differential amplifier having a variable transconductance

Abstract: An integration circuit includes a differential amplifier constituted by at least two bipolar transistors serving as amplifying elements, a capacitor connected, as a load, across the collection electrodes of the differential amplifier, and a field-effect transistor having source and drain electrodes connected between the emitter electrodes of the two bipolar transistors. A control voltage is applied to the gate electrode of the field-effect transistor. By changing the resistance value between the source and drain electrodes of the field-effect transistor using a gate voltage, the transconductance of the differential amplifier is changed over a wide range. As a result, the time constant of the integration circuit is changed, such that if the integration circuit is used for an active filter, for example, the cut-off frequency can be changed by changing the time constant of the integration circuit.

Inverting output driver circuit for reducing electron injection into the substrate

Abstract: A new inverting output driver circuit is disclosed that reduces electron injection into the substrate by the drain of the circuit's pull-up field effect transistor. This is accomplished by adding additional circuitry that allows the gate voltage of the pull-up transistor to track the source voltage. The output circuit makes use of an inverter having an output node (hereinafter the intermediate node) coupled to VCC through a first P-channel FET, and to ground through first and second series coupled N-channel FETs, respectively. The gates of the P-channel FET and the first N-channel FET are coupled to and controlled by an input node. The inverter output node controls the gate of third N-channel FET, through which a final output node is coupled to VCC. The intermediate node is coupled to the final output node through a fourth N-channel FET, the gate of which is held at ground potential. The gate of the second N-channel FET is coupled to VCC through a second P-channel FET and to the final output node through a fifth N-channel FET which has much greater drive than the second P-channel FET; the gates of both the second P-channel FET and the fifth N-channel FET also being held at ground potential. Certain obvious variations of the circuit are possible. For example, the function of the first and second N-channel FETs may be reversed. In addition, the second P-channel FET functions as a resistor, and may be replaced with any device which functions as a resistor.

Higher-order plasmon resonances in gan-based field-effect transistor arrays

Abstract: Terahertz (THz) response spectra of GaN-based field-effect transistor (FET) arrays are calculated in a self-consistent electromagmetic approach. Two types of FET arrays are considered: (i) FET array with a common channel and a large-area grating gate, and (ii) array of FET units with separate channels and combined intrinsic source and drain contacts. It is shown that the coupling between plasmons and THz radiation in the FET array can be strongly enhanced as compared to a single-unit FET. The computer simulations show that the higher-order plasmon modes can be excited much more effectively in the array of FET units with separate channels and combined source and drain contacts then in FET array with a common channel and a large-area grating gate.

Rf power amplifier system with impedance modulation

Abstract: A power amplifier controller circuit controls an adjustable impedance matching network at the output of a power amplifier to vary its load line to improve the efficiency of the RF PA. The PA controller circuit comprises an amplitude control loop that determines an amplitude correction signal. The amplitude loop is configured to control or correct for distortion from the adjustable matching network based upon the amplitude correction signal.