Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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Papers
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26 Mar 2004TL;DR: In this article, a hybrid coupler circuit has input ports coupled with outputs of the main amplifier circuit and auxiliary amplifier circuit, and a coupler second output port is terminated with one of an electrical short and an electrical open circuit.
Abstract: An amplifier includes a main amplifier circuit and at least one auxiliary amplifier circuit. Portions of an RF signal to be amplified are delivered to the main and auxiliary amplifiers. The auxiliary amplifier circuit is selectively operable to operate in combination with the main amplifier circuit, such as based on the level of the RF signal. At least one hybrid coupler circuit has input ports coupled with outputs of the main amplifier circuit and auxiliary amplifier circuit. The hybrid coupler circuit is operable to combine amplifier circuit output signals at a coupler first output port. A coupler second output port is terminated with one of an electrical short and an electrical open circuit.
172 citations
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TL;DR: In this paper, the authors derived an equation that allows the calculation of the intrinsic transconductance of a FET from the measured transconductance, under the assumption that source and drain series resistances are independent of bias.
Abstract: In exploratory study of FET's, such as the study of deep-submicrometer-channel FET's, carrier transport quantities are extracted from the measured transconductance of a FET. The extraction requires that the intrinsic transconductance of the device be calculated from the measured one, which is generally degraded by source and drain parasitic resistances. We have derived an equation that allows the calculation of the intrinsic transconductance of a FET from the measured transconductance, under the assumption that source and drain series resistances are independent of bias. The derivation does not assume zero drain conductance, nor does it involve any specific FET model. Therefore, the derived equation works in both saturation and linear regions of a FET, regardless of its channel length. The equation was tested by adding external resistors in series with source or drain of ultra-short-channel MOSFET's. Within the accuracy of the measurements, experimental results have proved that the equation is correct.
166 citations
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TL;DR: To the knowledge, these results represent the highest single-mode pulse energy extracted from any doped-fiber system.
Abstract: We report the amplification of 10-100-pJ semiconductor diode pulses to an energy of 158 microJ and peak powers >100 kW in a multistage fiber amplifier chain based on a single-mode, large-mode-area erbium-doped amplifier design. To our knowledge these results represent the highest single-mode pulse energy extracted from any doped-fiber system.
166 citations
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IBM1
TL;DR: In this article, a method of forming an SRAM cell device includes the following steps: form pass gate FET transistors and form a pair of vertical pull-down FETtransistors with a first common body and a first source in a silicon layer patterned into parallel islands formed on a planar insulator.
Abstract: A method of forming an SRAM cell device includes the following steps. Form pass gate FET transistors and form a pair of vertical pull-down FET transistors with a first common body and a first common source in a silicon layer patterned into parallel islands formed on a planar insulator. Etch down through upper diffusions between cross-coupled inverter FET transistors to form pull-down isolation spaces bisecting the upper strata of pull-up and pull-down drain regions of the pair of vertical pull-down FET transistors, with the isolation spaces reaching down to the common body strata. Form a pair of vertical pull-up FET transistors with a second common body and a second common drain. Then, connect the FET transistors to form an SRAM cell.
166 citations
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TL;DR: In this article, a bandpass floating-gate amplifier with hot-electron injection was developed, and the high-frequency cutoff was controlled electronically, as is done in continuous-time filters.
Abstract: We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-electron injection to set its dc operating point adaptively. Because the hot-electron injection is an inherent part of the pFET's behavior, we obtain this adaptation with no additional circuitry. Because the gate currents are small, the circuit exhibits a high-pass characteristic with a cutoff frequency less than 1 Hz. The high-frequency cutoff is controlled electronically, as is done in continuous-time filters. We have derived analytical models that completely characterize the amplifier and that are in good agreement with experimental data for a wide range of operating conditions and input waveforms. This autozeroing floating-gate amplifier demonstrates how to use continuous-time floating-gate adaptation in amplifier design.
165 citations