Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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Patent•
22 Apr 1986TL;DR: In this paper, a gallium arsenide differential amplifier is compensated against temperature and process induced variations so as to provide phase and amplitude matched differential output signals centered about an internal GaAs reference voltage.
Abstract: A gallium arsenide differential amplifier is compensated against temperature and process induced variations so as to provide phase and amplitude matched differential output signals centered about an internal GaAs reference voltage. Compensation of the amplifier is effected by one or more current sources which are adjustably responsive to the dynamic common mode level of the output signals. The resultant amplifier provides a high common mode rejection ratio and facilitates implementation of otherwise impracticable differential GaAs circuit topologies.
40 citations
Patent•
20 Apr 2000TL;DR: In this paper, a pixel sensor system that includes a photo-sensor, an output amplifier, and a feedback capacitor is presented, where the photo sensor is configured to receive photons and convert the photons into charge.
Abstract: A pixel sensor system that includes a photo-sensor, an output amplifier, and a feedback capacitor. The photo-sensor is configured to receive photons and to convert the photons into charge. The output amplifier has at least two transistors in a cascoded configuration. The amplifier converts the charge into electronic signal. The feedback capacitor is disposed between the photo-sensor and an input of the output amplifier.
40 citations
Book•
01 Jan 2008
TL;DR: In this paper, the authors present a comprehensive overview of semiconductors in the context of communication and communication networks, including special-purpose op-a-mp circuits, field effect transistors (FETs), Bipolar Junction Transistors (BJT's), and transistor bias circuits.
Abstract: Table of Contents 1. Semiconductors Basics 2. Diode Applications 3. Special-Purpose Diodes 4. Bipolar Junction Transistors (BJT's) 5. Transistor Bias Circuits 6. BJT Amplifiers 7. Power Amplifiers 8. Field-Effect Transistors (FETs) 9. FET Amplifiers 10. Amplifier Frequency Response 11. Thyristors 12. The Operational Amplifier 13. Basic Op-Amp Circuits 14. Special-Purpose Op-Amp Circuits 15. Active Filters 16. Oscillators 17. Voltage Regulators 18. Communications Circuits
40 citations
25 May 1988
TL;DR: In this article, an X-band power amplifier using harmonic tuning and a GaAs FET is described, which has demonstrated 36% power-added efficiency with 5 W of output power and a 6.0 dB gain at 10 GHz.
Abstract: An X-band power amplifier using harmonic tuning and a GaAs FET is described. The amplifier has demonstrated 36% power-added efficiency with 5 W of output power and a 6.0-dB gain at 10 GHz. The key to this design is determining and matching the optimum load impedance for power-added efficiency at the first two harmonics. Nonlinear models were used to study the effects of harmonic tuning and to determine the optimum harmonic terminations. Two amplifiers were designed that demonstrated high-efficiency power amplification at the 0.5-W and 5-W power levels, respectively. The effects of harmonic loading were demonstrated in the 0.5-W amplifier, where the maximum efficiency measured for a device tuned only at the fundamental was 44%, while the measured efficiency of the amplifier with optimum harmonic tuning was 49.3%. >
40 citations
TL;DR: In this article, the fundamental characteristics of the thin-film transmission lines for use in microwave active circuits are discussed through calculations by numerical analysis, and the proposed amplifier configurations can be applied to high density integration of one-chip MMIC modules.
Abstract: Miniaturized MMIC amplifiers utilizing a multilayer structure composed of thin film transmission lines are presented. The fundamental characteristics of the thin film transmission lines for use in microwave active circuits are discussed through calculations by numerical analysis. A two-stage low-noise amplifier, a single-stage wideband amplifier, and a balanced amplifier are designed within very small areas, while good performance is maintained. The results include that a Ka-band single-stage amplifier is fabricated in a 0.8 mm/spl times/0.6 mm area with a gain of 8.0-9.5 dB in the frequency range of 16-26.5 GHz and input/output return losses of better than 8 dB at 26.5 GHz. The proposed amplifier configurations can be applied to high density integration of one-chip MMIC modules. >
40 citations