Topic
FET amplifier
About: FET amplifier is a research topic. Over the lifetime, 7048 publications have been published within this topic receiving 77549 citations.
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05 Jun 2011
TL;DR: In this article, a high efficiency wideband envelope tracking power amplifier with low quiescent power is presented, which uses a source cross-coupled linear amplifier with inherently low DC power dissipation.
Abstract: A high efficiency wideband envelope tracking power amplifier with low quiescent power is presented. The CMOS envelope amplifier has a combined linear amplifier and switching amplifier to achieve high efficiency and wider bandwidth. Quiescent power of the envelope amplifier is reduced using a source cross-coupled linear amplifier with inherently low DC power dissipation. Measurements show a power added efficiency of 45% for the envelope tracking power amplifier for 20 MHz LTE signal with 6.0 dB PAPR at 2.5 GHz at 1W output power.
39 citations
22 Jun 1997
TL;DR: In this paper, a combination of a high fidelity class A power amplifier with a class D power amplifier as variable power supply is proposed, which has the merits of both class A and class D. The efficiency is seventy-seven percent at full power rating.
Abstract: A high power class A amplifier has excellent fidelity but dissipates too much power. A class D amplifier has high efficiency but shows poor fidelity. This paper proposes a combination of a high fidelity class A power amplifier with class D power amplifier as variable power supply. This amplifier named as class I has the merits of both class A amplifier and class D. The efficiency is seventy-seven percent at full power rating. The distortion of the proposed amplifier is about the same as that of class A amplifier. The measured 3 dB bandwidth is from 10 Hz to 100 kHz.
38 citations
TL;DR: In this article, a quasi-optical power combining transmission amplifier for increasing the power level available from solid-state circuits is presented, where receiving and transmitting arrays of patch antennas, input/output isolation, MESFETs, bias and matching circuitry are contained on a single substrate.
Abstract: The authors present a quasioptical power combining transmission amplifier for increasing the power level available from solid-state circuits. Receiving and transmitting arrays of patch antennas, input/output isolation, MESFETs, bias and matching circuitry are contained on a single substrate, making monolithic millimetre-wave integration possible. The flexibility of selecting input polarisation with respect to the output while maintaining amplifier stability is demonstrated. A 24-MESFET patch antenna amplifier array is presented.
38 citations
TL;DR: In this article, the power combiner is treated as an impedance transformer which allows different loading impedance to be taken into account, and a compact wideband power-combining network can be constructed.
Abstract: This paper details the development of our millimeter- wave wideband power amplifier design. By treating the power combiner as an impedance transformer which allows different loading impedance to be taken into account, a compact wideband power-combining network can be constructed. With small transmission-line attenuation being sustained and maximum output power easily extracted from the transistors over the 77- 110 GHz frequency range, a power amplifier can then be designed using 65-nm CMOS process to cover the whole W-band. In the on-wafer measurement, the gain is around 18 dB, the output reflection coefficients is below -10 dB, and the output-referred 1 dB compression point can reach 12 dBm at 1.2 V bias condition; when the bias is increased to 2.5 V, a 18 dBm output power is recorded. To our knowledge, this is the first CMOS power amplifier that covers the whole W-band.
38 citations
Patent•
05 Jan 2005TL;DR: In this paper, a gain boost circuit and methodology are described for providing improved gain boosting with tuned amplifier circuits, such as differential low-noise amplifier circuits having output resonant tank circuits.
Abstract: A gain boost circuit and methodology are described for providing improved gain boosting with tuned amplifier circuits, such as differential low noise amplifier circuits having output resonant tank circuits. By selectively controlling the current source for a negative transconductance stage coupled between the differential amplifier output and the output resonant tank circuits, the amplifier gain may be adjusted to compensate for temperature variations. In addition, the amplifier gain boost may be selectively added, removed or even incrementally adjusted by using a current source control circuit in the negative transconductance stage to adjust the negative transconductance value generated by the negative transconductance stage.
38 citations