Showing papers on "Field effect published in 2018"

Electric-field-tuned topological phase transition in ultrathin Na3Bi.

Abstract: The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor1-4. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator5-9, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits4, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far6-8. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases3,10-16. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal3,17 Na3Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na3Bi is suitable for room-temperature topological transistor operation.

Full superconducting dome of strong Ising protection in gated monolayer WS2

Abstract: Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g., superconductor-semiconductor hybrid devices). Here we show that using field effect gating, we can induce superconductivity in monolayer WS2 grown by chemical vapor deposition, a typical ambient-stable semiconducting transition metal dichalcogenide (TMD), and we are able to access a complete set of competing electronic phases over an unprecedented doping range from band insulator, superconductor, to a reentrant insulator at high doping. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in the external magnetic field. The reentrant insulating state at positive high gating voltages is attributed to localization induced by the characteristically weak screening of the monolayer, providing insight into many dome-like superconducting phases observed in field-induced quasi-2D superconductors.

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

Abstract: Precise tunability of electronic properties of two-dimensional (2D) nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS2) has long been thought to be detrimental to the electrical performance of the material. We show that the mobility and conductivity of MoS2 can be precisely controlled and improved by systematic exposure to oxygen/argon plasma and characterize the material using advanced spectroscopy and microscopy. Through complementary theoretical modeling, which confirms conductivity enhancement, we infer the role of a transient 2D substoichiometric phase of molybdenum trioxide (2D-MoO x ) in modulating the electronic behavior of the material. Deduction of the beneficial role of MoO x will serve to open the field to new approaches with regard to the tunability of 2D semiconductors by their low-dimensional oxides in nano-modified heterostructures.

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application.

Abstract: Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS2 islands. Based on such continuous MoS2 films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V T ) and field effect mobility (μFE ) for hundreds of MoS2 FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μFE of 70 cm2 V-1 s-1 and subthreshold swing of about 150 mV dec-1 are extracted from these MoS2 FETs, which are comparable to the best top-gated MoS2 FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits.

Metallic supercurrent field-effect transistor.

Abstract: In their original formulation of superconductivity, the London brothers predicted1 the exponential suppression of an electrostatic field inside a superconductor over the so-called London penetration depth2–4, λL. Despite a few experiments indicating hints of perturbation induced by electrostatic fields5–7, no clue has been provided so far on the possibility to manipulate metallic superconductors via the field effect. Here, we report field-effect control of the supercurrent in all-metallic transistors made of different Bardeen–Cooper–Schrieffer superconducting thin films. At low temperature, our field-effect transistors show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as ±40 V in titanium-based devices. This bipolar field effect persists up to ~85% of the critical temperature (~0.41 K), and in the presence of sizable magnetic fields. A similar behaviour is observed in aluminium thin-film field-effect transistors. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-field-induced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of all-metallic superconducting field-effect electronics and leading-edge quantum information architectures8,9.

Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition.

Abstract: Tungsten diselenide (WSe2) is a particularly interesting 2D material due to its p-type conductivity. Here we report a systematic single-step process to optimize crystal size by variation of multiple growth parameters resulting in hexagonal single crystals up to 165 μm wide. We then show that these large single crystals can be controllably in situ doped with the acceptor Niobium (Nb). First principles calculations suggest that substitutional Nb doping of W would yield p-doping with no gap trap states. When used as the active layer of a field effect transistor (FET), doped crystals exhibit conventional p-type behavior, rather than the ambipolar behaviour seen in undoped WSe2 FETs. Nb-doped WSe2 FETs yield a maximum field effect mobility of 116 cm2 V-1 s-1, slightly higher than its undoped counterpart, with an on/off ratio of 106. Doping reduces the contact resistance of WSe2, reaching a minimum value of 0.55 kΩμm in WSe2 FETs. The areal density of holes in Nb-doped WSe2 is approximately double that of undoped WSe2, indicating that Nb doping is working as an effective acceptor. Doping concentration can be controlled over several orders of magnitudes, allowing it to be used to control: FET threshold voltage, FET off-state leakage, and contact resistance.

Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS2

Abstract: Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS$_2$) has long been thought to be detrimental to the electrical performance of the material. Here we show that the mobility and conductivity of MoS$_2$ can be precisely controlled and improved by systematic exposure to oxygen:argon plasma, and characterise the material utilising advanced spectroscopy and microscopy. Through complementary theoretical modelling which confirms conductivity enhancement, we uncover the role of a two-dimensional phase of molybdenum trioxide (2D-MoO$_3$) in improving the electronic behaviour of the material. Deduction of the beneficial role of MoO$_3$ will serve to open the field to new approaches with regard to the tunability of 2D semiconductors by their low-dimensional oxides in nano-modified heterostructures.

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI 3 Perovskite Nanorods Bilayer Structure

Abstract: The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Abstract: Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure–charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure–property relationships in organic semiconductors. The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field effect transistor mobility that depends on step density.

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

Abstract: High quality sub-10 nm high-k dielectrics are deposited on top of MoS2 and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO2 and an Al2O3/HfO2 bilayer shows significant improvement in device performance due to the insertion of the thin Al2O3 layer. The results show that the Al2O3 buffer layer improves the interface quality by effectively reducing the net fixed positive oxide charge at the top-gate MoS2/high-k dielectric interface. Dual-gate sweeping, where both the top-gate and the back-gate are swept simultaneously, provides significant insight into the role of these oxide charges and improves overall device performance. Dual-gate transistors encapsulated in an Al2O3 dielectric demonstrate a near-ideal subthreshold swing of ∼60 mV/dec and a high field effect mobility of 100 cm2/V·s.

Leakage mechanisms in GaN-on-GaN vertical pn diodes

Abstract: Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

Field effect enhancement in buffered quantum nanowire networks

Abstract: III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.

Dense Ge nanocrystals embedded in TiO 2 with exponentially increased photoconduction by field effect

Abstract: Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in nanocrystals. In this work, dense Ge nanocrystals suitable for enhanced photoconduction were fabricated from 60% Ge in TiO2 amorphous layers by low temperature rapid thermal annealing at 550 °C. An exponential increase of the photocurrent with the applied voltage was observed in coplanar structure of Ge nanocrystals composite films deposited on oxidized Si wafers. The behaviour was explained by field effect control of the Fermi level at the Ge nanocrystals-TiO2 layer/substrate interfaces. The blue-shift of the absorption gap from bulk Ge value to 1.14 eV was evidenced in both photocurrent spectra and optical reflection-transmission experiments, in good agreement with quantum confinement induced bandgap broadening in Ge nanocrystal with sizes of about 5 nm as found from HRTEM and XRD investigations. A nonmonotonic spectral dependence of the refractive index is associated to the Ge nanocrystals formation. The nanocrystal morphology is also in good agreement with the Coulomb gap hopping mechanism of T–1/2 -type explaining the temperature dependence of the dark conduction.

Tailoring Structure and Field-Effect Characteristics of Ultrathin Conjugated Polymer Films via Phase Separation

Abstract: A phase-separation method has been developed to control the semiconductor thickness and molecular arrangement via the semiconducting/insulating polymer blend system. The thickness of the poly(3-hexylthiophene) film has been regulated from 10.5 ± 1.4 nm down to 1.9 ± 0.8 nm with a favorable self-assembly degree and the mobility ranging from 0.21 to 0.03 cm2 V-1 s-1. The ultrathin films show high bias stability and weak decay after 24 days with a bottom-gate configuration. Benefited from a good molecular order, the films have low activation energy and a 2D charge transport profile in semiconductor layers. Moreover, this blending process can be used as a general strategy of thickness control in flexible low-voltage devices and donor-acceptor-conjugated polymers.

On the low magnetic field effect in radical pair reactions

Abstract: Radical pair recombination reactions are known to be sensitive to the application of both low and high magnetic fields. The application of a weak magnetic field reduces the singlet yield of a singlet-born radical pair, whereas the application of a strong magnetic field increases the singlet yield. The high field effect arises from energy conservation: when the magnetic field is stronger than the sum of the hyperfine fields in the two radicals, S → T± transitions become energetically forbidden, thereby reducing the number of pathways for singlet to triplet interconversion. The low field effect arises from symmetry breaking: the application of a weak magnetic field lifts degeneracies among the zero field eigenstates and increases the number of pathways for singlet to triplet interconversion. However, the details of this effect are more subtle and have not previously been properly explained. Here we present a complete analysis of the low field effect in a radical pair containing a single proton and in a radical pair in which one of the radicals contains a large number of hyperfine-coupled nuclear spins. We find that the new transitions that occur when the field is switched on are between S and T0 in both cases, and not between S and T± as has previously been claimed. We then illustrate this result by using it in conjunction with semiclassical spin dynamics simulations to account for the observation of a biphasic-triphasic-biphasic transition with increasing magnetic field strength in the magnetic field effect on the time-dependent survival probability of a photoexcited carotenoid-porphyrin-fullerene radical pair.

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Abstract: WSe2 has attracted extensive attention for p-FETs due to its air stability and high mobility. However, the Fermi level of WSe2 is close to the middle of the band gap, which will induce a high contact resistance with metals and thus limit the field effect mobility. In this case, a high work voltage is always required to achieve a large ON/OFF ratio. Herein, a stable WSe2 p-doping technique of coating using a ferroelectric relaxor polymer P(VDF-TrFE-CFE) is proposed. Unlike other doping methods, P(VDF-TrFE-CFE) not only can modify the Fermi level of WSe2 but can also act as a high-k gate dielectric in an FET. Dramatic enhancement of the field effect hole mobility from 27 to 170 cm2 V-1 s-1 on a six-layer WSe2 FET has been achieved. Moreover, an FET device based on bilayer WSe2 with P(VDF-TrFE-CFE) as the top gate dielectric is fabricated, which exhibits high p-type performance over a low top gate voltage range. Furthermore, low-temperature experiments reveal the influence of the phase transition of P(VDF-TrFE-CFE) on the channel carrier density and mobility. With a decrease in temperature, field effect hole mobility increases and approaches up to 900 cm2 V-1 s-1 at 200 K. The combination of the p-doping and gating with P(VDF-TrFE-CFE) provides a promising solution for obtaining high-performance p-FET with 2D semiconductors.

Low-temperature sol-gel ZrHfO2-PMMA hybrid dielectric thin-films for metal oxide TFTs

Abstract: In this work, we developed a novel inorganic-organic hybrid gate dielectric by combining zirconium and hafnium components to form zirconium hafnium oxide strongly linked with polymethyl methacrylate (ZrHfO2-PMMA) and deposited at low temperature (200 °C) by sol-gel method. The obtained 108 nm thick, high-quality hybrid gate dielectric showed an exceptionally low surface roughness (0.9-nm), a low leakage current density (7.7 × 10−6 A/cm2) and reasonable dielectric properties such as gate capacitance along with dielectric constant (77 nF/cm2 & 9.4 @1 kHz) respectively. To examine the ZrHfO2-PMMA hybrid dielectric electrical properties we constructed thin-film transistors (TFTs) with room temperature r.f sputtered n-type metal oxide semiconductors, a-IGZO and ZnO, as active channels. The bottom gate fabricated a-IGZO TFTs driving at as low as below 6 V, with extracted field effect mobility of 2.45 cm2/V. s, a low threshold voltage of 1.2 V with large ON/OFF current ratio 107 respectively. On the other hand, for comparison we employed ZnO TFTs by applying same hybrid dielectric system, the obtained parameters of bottom gate ZnO TFTs were good field effect saturation mobility of 12.8 cm2/V. s, threshold voltage of 1.8 V and ON/OFF current ratio of 103.

Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3 ω Method

Abstract: We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

Abstract: We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (<102). Even after the post-annealing at 400 °C for the TFTs, the on/off ratio is still poor (∼102) because of the gate-induced drain leakage current although a nominal field effect mobility is enhanced up to ∼25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor

Abstract: We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr02Ti08O3 was connected to the gate of a field effect thin film MoS2 transistor When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor

Unsymmetrical starburst triarylamines: synthesis, properties, and characteristics of OFETs

Abstract: Functionalized triarylamines were constructed through Suzuki coupling for organic field effect transistor (OFET) applications. Easy solution processable OFETs yielded a good field effect mobility of up to 15 × 10−2 cm2 V−1 s−1. The ON/OFF ratio had a magnitude of 107, enabling the molecules to be promising electronic materials.

Third-harmonic generation of a laser-driven quantum dot with impurity

Abstract: The third-harmonic generation (THG) coefficient for a laser-driven quantum dot with an on-center Gaussian impurity under static magnetic field is theoretically investigated. Laser field effect is treated within the high-frequency Floquet approach and the analytical expression of the THG coefficient is deduced from the compact density-matrix approach. The numerical results demonstrate that the application of intense laser field causes substantial changes on the behavior of THG. In addition the position and magnitude of the resonant peak of THG coefficient is significantly affected by the magnetic field, quantum dot size and the characteristic parameters of the impurity potential.

Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

Abstract: The appearance of half-metallicity, modulated by a transverse electric field, in stanene nanoribbons could be exploited to generate highly spin-polarized currents in tunnel-field-effect transistors. In particular, the sensitivity of interband tunneling to small modulations of stanene's band gap, its reduced dependence on temperature, and its robustness against the presence of defects, lead to calculations suggesting that one can obtain tunable, 98% spin-polarized current with a small applied voltage on the control electrode. The proposed device could be useful in exploring innovative concepts of spin injectors or filters, which are fundamental building blocks of spintronics.

Electrical and Optical Characteristics of PQT-12-Based Organic TFTs Fabricated by Floating-Film Transfer Method

Abstract: The electrical and optical characteristics of bottom-gate top-contact poly (3, 3’’’- dialkylquaterthiophene) (PQT-12) polymer-based organic thin film transistors (OTFTs) fabricated by floating-film transfer method (FTM) have been investigated in this paper. The atomic force microscopy, UV-Vis spectroscopy, and photoluminance characteristics of the FTM-based PQT-12 films have been compared with the PQT-12 films deposited by the conventional spin-coating method. The improved electrical characteristics of FTM-based OTFT have been found as compared to those of the spin-coated OTFTs. Due to better properties of the FTM-based PQT-12 films over the spin coated films, the electrical and optical characteristics of the FTM-based OTFT have been compared under dark and illuminated conditions. The FTM film-based OTFT shows the respective values of field effect mobility and threshold voltage of 7.8 × 10−2 cm2/Vs and –8.1 V under dark and 8.9 × 10 −2 cm2/Vs and –5.3 V under illumination of 200 μW/cm2 at 540 nm. The maximum responsivity of 11.3 A/W is found at the light intensity of 5 μW/cm2 at 540 nm.

Electric field tuned MoS2/metal interface for hydrogen evolution catalyst from first-principles investigations.

Abstract: Understanding the interfacial properties of catalyst/substrate is crucial for the design of high-performance catalyst for important chemical reactions. Recent years have witnessed a surge of research in utilizing MoS2 as a promising electro-catalyst for hydrogen production, and field effect has been employed to enhance the activity (Wang et al 2017 Adv. Mater. 29, 1604464; Yan et al 2017 Nano Lett. 17, 4109-15). However, the underlying atomic mechanism remains unclear. In this paper, by using the prototype MoS2/Au system as a probe, we investigate effects of external electric field on the interfacial electronic structures via density functional theory (DFT) based first-principles calculations. Our results reveal that although there is no covalent interaction between MoS2 overlayer and Au substrate, an applied electric field efficiently adjusts the charge transfer between MoS2 and Au, leading to tunable Schottky barrier type (n-type to p-type) and decrease of barrier height to facilitate charge injection. Furthermore, we predict that the adsorption energy of atomic hydrogen on MoS2/Au to be readily controlled by electric field to a broad range within a modest magnitude of field, which may benefit the performance enhancement of hydrogen evolution reaction. Our DFT results provide valuable insight into the experimental observations and pave the way for future understanding and control of catalysts in practice, such as those with vacancies, defects, edge states or synthesized nanostructures.

Potassium ions in SiO2: electrets for silicon surface passivation

Abstract: This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5 × 1012 e cm−2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide–silicon interface with SRV < 7 cm s−1, in 1 cm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.

Fabrication, Characterization and Electrochemical Modeling of CNT Based Enzyme Field Effect Acetylcholine Biosensor

Abstract: A carbon nanotube based enzyme field effect transistor has been fabricated and modeled for acetylcholine (ACh) detection, which finds varied applications in the field of biosensors and bioelectronics. The fabrication has been done using chemical solution process. The device consists of indium tin oxide coated glass plate as substrate, ZnO as bottom insulator, K-doped carbon nanotube as n-type channel, drain, and source regions, ZrO2 as top gate insulator and chitosan/nickel oxide (CH/NiO) nanocomposite as sensing membrane arranged from bottom to top respectively. Physical adsorption technique has been used for enzyme acetylcholine esterase (AChE) immobilization on the sensing membrane. The experimental results have shown good linearity from 0.01 to 0.2 mM concentration of ACh and a good sensitivity of 58 mV/decade at room temperature. Insignificant interference was observed with other clinical parameters. An electrochemical model of the fabricated device has been developed and then, simulated considering all the biological, chemical, and physical parameters of the device. The modeling and simulation results have shown good agreement with the experimental results.