Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the authors grow perpendicular L10-FePt films epitaxially on (001)[Pb(Mg1/3Nb2/3)]0.7-(PbTiO3)0.3 ferroelectric substrates.
Abstract: We grow perpendicular L10-FePt films epitaxially on (001)[Pb(Mg1/3Nb2/3)]0.7-(PbTiO3)0.3 ferroelectric substrates. Due to the magnetostriction effect, the out-of-plane coercivity (Hc⊥) of the L10-FePt varies with applied electric fields, showing an asymmetric butterfly-like loop. The Hc⊥ at the zero-electric-field state (Hc⊥,0) shows a nonvolatile change, depending on the direction of the poling electric field. The magnitude of nonvolatile magnetic anisotropy change, induced by the ferroelectric field effect, can be comparable to the anisotropy change induced by pure electric fields. The nonvolatile magnetic anisotropy change is inversely proportional to the FePt thickness and can be eliminated by inserting a metallic intermediate layer.
41 citations
TL;DR: In this article, the influence of a thin ITO contact layer with dopant densities ranging from 10 19 - 10 21 cm -3 placed between an ITO bulk layer of 70 nm with N d = 2·10 20 cm −3 and the a-Si:H(p) emitter on the J-V characteristics was investigated, with the aim to find an optimum N d.
41 citations
TL;DR: In this article, an FET operation is observed without any annealing processes even once the fabricated devices are exposed to air, which has not ever seen in the conventional C 60 FETs.
41 citations
TL;DR: In this article, the effect of applied electric field on the room temperature charge transport in ZnO/La0.7Sr0.3MnO3/SrNb0.002Ti0.998O3 (SNTO) heterostructure has been investigated using field effect studies.
Abstract: Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La0.7Sr0.3MnO3/SrNb0.002Ti0.998O3 (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (ELZ), (ii) SNTO as a control electrode (ELS), and (iii) shorted ZnO and SNTO as control electrodes (ELZS). For this, channel electric field (ECH) dependent variation in channel resistance (RC) (of manganite channel) and I-V (across manganite channel) under various control fields (EC) have been studied. Variation in barrier height (ΦB) with control field (EC) for different geometries has been discussed.
40 citations
TL;DR: In this paper, the electric field effect on the electrical resistance of the surfaces of p-type indium arsenide was studied at 4.2 and 77°K in magnetic fields ranging up to 110kOe.
40 citations