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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


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Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs) using ac dielectrophoresis technique.
Abstract: We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with on-off ratios up to ∼2×104. The measured field effect mobilities are as high as 123 cm2/V s, which is three orders of magnitude higher than typical solution processed organic FET devices.

39 citations

Journal ArticleDOI
TL;DR: In this article, the near symmetry of the plots and their change with deposition rate are interpreted in terms of a Cohen-Fritzsche-Ovshinsky type density of states model.
Abstract: The field‐effect conductance modulation experiment, performed on vacuum‐evaporated amorphous silicon films, yielded better than three orders of magnitude change in current for both positive and negative gate voltages. The near symmetry of the plots and their change with deposition rate are interpreted in terms of a Cohen‐Fritzsche‐Ovshinsky‐type density‐of‐states model. Calculations are presented for the model that includes the mobile charge and the mobility ratio of the carriers. Results are presented for room as well as for elevated temperatures. The Fermi energy is near the center of the mobility gap and the density of localized states is nearly uniform for ±0.4 eV above and below EF. At energies greater than 0.4 eV away from the Fermi energy, the density of the localized states is modeled by an increasing exponential out to the limit of the experimental data at about ±0.455 eV. The theory and experiment agree at room temperature and over a range of temperatures and sample preparation conditions. The l...

39 citations

Journal ArticleDOI
TL;DR: In this article, thin conducting films of polyanilines and oligoanilines were deposited by using a layer-by-layer self-assembly process, and conductivity, thermoelectric power and field effect measurements were performed on the films.

39 citations

Proceedings ArticleDOI
01 Dec 2006
TL;DR: In this article, the authors reported a CMOS nanocrystalline silicon thin film transistors with high field effect mobility, which was directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150 degC.
Abstract: CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150 degC. The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation

39 citations

Journal ArticleDOI
TL;DR: In this article, the effect of surface roughness on the electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors was investigated.

39 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133