Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, the electrical characteristics of n-channel depletion-type and p-channel enhancement-type space-charge-limited tetrodes were derived from the MOSFET structure and are fabricated on nearly intrinsic silicon substrates with very small channel lengths.
Abstract: The electrical characteristics of n-channel depletion-type and p-channel enhancement-type space-charge-limited tetrodes are presented. The devices are derived from the MOSFET structure and are fabricated on nearly intrinsic silicon substrates with very small channel lengths. In both structures, the current flowing between drain and source can be modulated by either of two high-impedance control terminals. The dominant conduction mechanism is space-charge-limited current flow, and the observed current-voltage characteristics of each device follow the Mott and Gurney relationship at high current levels.
35 citations
TL;DR: This work fabricates multigated silicon nanowires (Si NWs) and demonstrates significant modulation of electrical conductivity and the Seebeck coefficient with gate bias, demonstrating that power factor for the gated Si NWs is similar to the highest values reported for n-type Si nanostructures despite charge transport only occurring at the NW surface.
Abstract: Electric-field-induced charge carriers typically exhibit greater mobility over carriers contributed by chemical dopants and offer a powerful mechanism for thermoelectric power factor enhancement. We fabricate multigated silicon nanowires (Si NWs) and demonstrate significant modulation of electrical conductivity and the Seebeck coefficient with gate bias. Because of the higher mobility of field-effect charge carriers, we demonstrate that power factor for the gated Si NWs is similar to the highest values reported for n-type Si nanostructures despite charge transport only occurring at the NW surface. Field-effect doping is a promising strategy for optimizing power factor and may result in significant power factor enhancement in smaller diameter Si NWs where high average carrier densities can be obtained with induced surface charge.
35 citations
TL;DR: In this paper, a new type of thin film transistor (TFT) has been fabricated using hydrogenated amorphous silicon (a-Si:H)/silicon nitride (aSi1-xNx:H) multilayer structures.
Abstract: A new type of thin film transistor (TFT) has been fabricated using hydrogenated amorphous silicon (a-Si:H)/silicon nitride (a-Si1-xNx:H) multilayer structures. The field effect mobility of the superlattice TFT was 0.74 cm2/Vs, while that of an a-Si:H TFT with the active layer produced by the same deposition conditions as the superlattice was 0.13 cm2/Vs. The increase in the field effect mobility for the superlattice was interpreted in terms of the quantum size effects in the a-Si:H potential well.
35 citations
TL;DR: In this article, the authors report the fabrication of field effect transistors on single crystals of the highly anisotropic organic semiconductor tetramethyltetraselenafulvalene.
Abstract: We report the fabrication of field-effect transistors on single crystals of the highly anisotropic organic semiconductor tetramethyltetraselenafulvalene. We find maximum mobilities of 0.2 cm2/V s at room temperature. We observe an exponential decrease of mobility with decreasing temperature with an activation energy 160±30 meV, independent of sample quality or fabrication method.
35 citations
TL;DR: In this paper, the authors measured transient currents on evaporated thin film transistors based on nickel phthalocyanine and showed that the mobility is field dependent and that the threshold voltage is close to zero.
35 citations