Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Abstract: High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

Electric Field and Temperature Dependence of Electrical Conductivity in Biaxially Oriented Polypropylene Films

Abstract: In pulsed power systems, metallized film capacitors facilitate the operation of the film with a relatively small margin to its dc breakdown strength. Electrical conduction in metallized biaxially oriented polypropylene (BOPP) film may result in the leakage in high energy density capacitors and thus the reduction of the energy efficiency. This paper investigates the mechanism of the electric field and temperature dependence of electrical conduction in the BOPP film capacitor. A proposed model for the electrical conductivity takes into consideration both the Poole-Frenkel effect and field-enhanced carrier mobility. Experiments are performed to measure the electrical conductivity of the BOPP film at different electric fields and temperatures.

Estimate the electrical activity in a neuron under depolarization field

Abstract: The physical electric variable is included into the known Hindmarsh-Rose (HR) model for estimating the depolarization field effect and then external current forcing is applied to detect the firing responses. Based on the proposed model, the effects of the amplitude and frequency of the sinusoidal current on the firing mode of the neuron are studied by using bifurcation analysis. It is found that there is a peak of firing interval of neurons with the increasing of stimulation current intensity. In the presence of electric field, the firing pattern of neuron is transformed from single busting to intermittent multimodal busting with the increasing of frequency and amplitude of electric field. The largest Lyapunov exponent is drawn for verification. In the absence of electric field, the two neurons coupled in the first variable achieve synchronization in busting mode. If there is an external electric field, the two neurons can achieve intermittent multimodal busting firing synchronization even without direct variable couple since the energy is injected into the coupled system by the external electric field. Our results show that the periodic external electric field and external current stimulation play an important role in the neuronal firing pattern.

Tunnel field effect transistors

Abstract: Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first drain region of a first conductivity type disposed in a first region of a substrate, a first source region of a second conductivity type disposed in the substrate, the second conductivity type being opposite the first conductivity type, a first channel region electrically coupled between the first source region and the first drain region, the first source region underlying a least a portion of the first channel region, and a first gate stack overlying the first channel region.