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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


Papers
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Journal ArticleDOI
TL;DR: Au films with island structure simultaneously show electroluminescence and electron emission as mentioned in this paper, one component of the latter orginate from hot electrons, the other from field effect.

32 citations

Journal ArticleDOI
TL;DR: It is demonstrated that through a simple yet careful choice of cluster size and organic ligands, stable Au nanocluster films can electronically couple and become semiconducting, exhibiting electric field effect and photoconductivity.
Abstract: Quantum-confined Au nanoclusters exhibit molecule-like properties, including atomic precision and discrete energy levels. The electrical conductivity of Au nanocluster films can vary by several orders of magnitude and is determined by the strength of the electronic coupling between the individual nanoclusters in the film. Similar to quantum-confined, semiconducting quantum dots, the electrical coupling in films is dependent on the size and structure of the Au core and the length and conjugation of the organic ligands surrounding it. Unlike quantum dots, however, semiconducting transport has not been reported in Au nanocluster films. Here, it is demonstrated that through a simple yet careful choice of cluster size and organic ligands, stable Au nanocluster films can electronically couple and become semiconducting, exhibiting electric field effect and photoconductivity. The molecule-like nature of the Au nanoclusters is evidenced by a hopping transport mechanism reminiscent of doped, disordered organic semiconductor films. These results demonstrate the potential of metal nanoclusters as a solution-processed material for semiconducting devices.

32 citations

Proceedings ArticleDOI
01 Dec 2007
TL;DR: In this paper, the fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors and their bias stress stability was presented, and low and tunable threshold voltages of 1-2 V were achieved.
Abstract: The fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors (TTFT) and their bias stress stability is presented. N-channel enhancement mode devices were fabricated with an extracted field effect mobility of ~ 11-15 cm2 V-1s-1, on/off current ratios > 107, subthreshold gate voltage swing of 0.20-0.25 V/decade, low off-state currents and good saturation. Low and tunable threshold voltages of 1-2 V were achieved. We conclude that a charge trapping mechanism at the semiconductor/dielectric interface is responsible for the threshold voltage shift after a gate bias stress. The threshold voltage is recovered when the bias is removed.

32 citations

Patent
31 Oct 1990
TL;DR: In this article, a complementary field effect element develops an intensified latch-up preventive property even if the distance between the emitters of parasitic transistors is short, and a method of producing the same is disclosed.
Abstract: A complementary field effect element develops an intensified latch-up preventive property even if the distance between the emitters of parasitic transistors is short, and a method of producing the same are disclosed. The complementary field effect element includes a high concentration impurity layer (16) formed by ion implantation in the boundary region between a P-well (2) and an N-well (3) which are formed adjacent each other on the main surface of a semiconductor substrate (1). Therefore, carriers passing through the boundary region between the P-well (2) and the N-well (3) are decreased, so that even if the distance between the emitters (4, 5) of parasitic transistors is short, there is obtained an intensified latch-up preventive property.

32 citations

Journal ArticleDOI
TL;DR: In this article, the impact of carbon nanotube bundles on the performance of devices with different geometries and surface treatments was studied, and the authors observed an increase in the effective field effect mobility as high as 20 times while maintaining the high on/off ratios.
Abstract: Organic field-effect transistors containing pentacene or α sexithiophene on random arrays of carbon nanotube bundles were fabricated. The impact of nanotube bundles on the performance of devices with different geometries and surface treatments was studied. Upon incorporation of an appropriate amount of nanotube bundles, we observed an increase in the “effective” field effect mobility as high as 20 times while maintaining the high on/off ratios. Furthermore, our preliminary results show that nanotube bundles might template the growth of organic crystals under certain conditions, resulting in the formation of organic nucleates with preferred orientations.

32 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133