Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this paper, electron-beam vacuum-deposited amorphous silicon films were deposited at controlled rates from 3.1 to 5.6 A/sec onto Si−SiO2 substrates followed by a 4−h 400 °C in situ anneal.
Abstract: Electron−beam vacuum−deposited amorphous silicon films were deposited at controlled rates from 3.1 to 5.6 A/sec onto Si−SiO2 substrates followed by a 4−h 400 °C in situ anneal. The high−temperature activation energy for these films has an average value of 0.79 eV and is relatively independent of the deposition rate. The room−temperature resistivity varies from 3×107 Ω cm at a 5.6 A/sec rate to 5.7×107 Ω cm at 3.1 A/sec. The preexponential factor has an average value of 7×10−5 Ω cm and is independent of the deposition rate. A change in source−drain current due to a transverse electric field was observed at room and elevated temperatures for both positive and negative gate voltages. The results indicate that the Fermi level is not pinned near midgap and that the density of localized states near the Fermi level is nearly uniform for ±0.40 above and below midgap. Calculations indicate that the density of localized states near the Fermi level is about 1020/cm3 eV and decreases slightly as the rate is decreased.
31 citations
TL;DR: In this article, surface conductivity and field effect mobility have been observed on germanium crystals cleaved in ultra high vacuum and derived from the surface state density is derived, which suggests that the observed density of states is determined by surface atom arrangement.
31 citations
TL;DR: In this paper, a field effect device was used to modify the number of holes in the surface layers of 4 to 10 unit cell Nd1.2Ba1.8Cu3Oy epitaxial films grown on (100) SrTiO3 substrates.
Abstract: Using a field effect device we modified the number of holes in the surface layers of 4 to 10 unit cell Nd1.2Ba1.8Cu3Oy (NBCO) epitaxial films grown on (100) SrTiO3 substrates. The results obtained on a set of 12 devices demonstrate that it is possible to induce reversible changes of the hole density of NBCO films by field effect. It is found that the field effect becomes less pronounced increasing the film thickness. Insulating–superconducting transition was observed in one 8 unit cell NBCO field effect device.
31 citations
TL;DR: In this paper, a p-n junction was developed in a graphene transistor by a simple photolithography process used in typical semiconductor processes, where the p and n-type regions were formed by coating photoresist on part of the graphene channel and immersion of the uncovered graphene region in alkali developer, respectively.
Abstract: A p–n junction was developed in a graphene transistor by a simple photolithography process used in typical semiconductor processes. The p- and n-type regions were formed by coating photoresist on part of the graphene channel and immersion of the uncovered graphene region in alkali developer, respectively. A 3-fold enhancement of the photocurrent was observed at the maximum field effect mobility. It is therefore important to maximize the field effect mobility by doping to maximize the photocurrent. The results obtained here are an important step toward the production of high-sensitivity graphene-based phototransistors compatible with conventional industrial procedures.
31 citations
TL;DR: In this paper, a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 buffer layer was grown on SrTiO3 substrate.
Abstract: We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO. We measured optical and dielectric properties of the BaHfO3 gate insulator; the optical bandgap, the dielectric constant, and the breakdown field. Furthermore, we fabricated a perovskite heterostructure field effect transistor using epitaxial BaHfO3 as a gate insulator and La-doped BaSnO3 as a channel layer on SrTiO3 substrate. To reduce the threading dislocations and enhance the electrical properties of the channel, an undoped BaSnO3 buffer layer was grown on SrTiO3 substrates before the channel layer deposition. The device exhibited a field effect mobility value of 52.7 cm2 V−1 s−1, a Ion/Ioff ratio higher than 107, and a subthreshold swing value of 0.80 V dec−1. We compare the device performances with those of other field effect transistors based on BaSnO3 channels and different gate oxides.
31 citations