Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

Characterization of the metal–insulator interface of field-effect chemical sensors

Abstract: The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference ...

Complementary insulated gate field effect devices

Abstract: A complementary pair of insulated gate field effect transistors is fabricated in a monocrystalline silicon wafer. The method features the use of doped-oxide diffusion sources, self-aligned, passivated-gate electrodes, and the concurrent diffusion of the source and the drain regions for both the n-channel device and the p-channel device in a single step.

The effect of gate dielectric modification and film deposition temperature on the field effect mobility of copper (II) phthalocyanine thin-film transistors

Abstract: The change of the field effect mobility of copper (II) phthalocyanine (CuPc) ultra-thin films with the change of dielectric surface and deposition temperature has been systematically investigated. CuPc films are prepared on bare and modified SiO2 substrates at different deposition temperatures. The crystalline structure and morphology of the films have been characterized by x-ray diffraction and atomic force microscopy. The observed device parameters show that the dielectric surface modification reduces the off-state mobile charge carrier density and interfacial trap density. Dielectric surfaces with lower or comparable surface energy to that of CuPc are found to produce devices with higher mobility. The dependence of mobility on deposition temperature shows a strong correlation with the behaviour of the dielectric layers at various temperatures and the diffusion of CuPc molecules.