Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the authors studied the electronic transport properties of DyScO3/SrTiO3 polar heterointerface grown at different oxygen pressures and found that the DySO3 film deposited under 10−4 ǫmbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K.
Abstract: Electronic transport properties of DyScO3/SrTiO3 polar heterointerface grown at different oxygen pressures are studied. This DyScO3/SrTiO3 polar heterointerface exhibits much higher charge mobility, up to 104 cm2 V−1 s−1, compared to the LaAlO3/SrTiO3 system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO3 film deposited under 10−4 mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction.
30 citations
TL;DR: In this article, the Anderson transition has been studied in MOS and MNOS structures and the conductivity, magnetoresistance and Hall effect of this low temperature phenomenon are discussed.
30 citations
TL;DR: In this paper, a new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors with high field-effect mobilities.
Abstract: A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities The dielectric is a homogeneous SiO2-silicone hybrid, which is deposited by plasma-enhanced chemical vapor deposition system at nominal room temperature This new dielectric results in a-Si:H TFTs with measured field-effect mobilities of ∼2 cm2/V s for electrons and ∼01 cm2/V s for holes
30 citations
TL;DR: In this paper, the electronic structure of subbands and the inter-subband optical absorption spectrum are calculated in an n-channel accumulation layer on the Si (100) surface in strong magnetic fields applied parallel to the surface.
Abstract: The electronic structure of subbands and the inter-subband optical absorption spectrum are calculated in an n-channel accumulation layer on the Si (100) surface in strong magnetic fields applied parallel to the surface. The exchange and correlation effect is taken into account in an approximation scheme based on the density functional formulation. The peak energy of the absorption is shifted to the high energy side almost linearly with the magnetic field. The amount of the shift increases with the electron concentration mainly due to the depolarization field effect. The results agree with experimental results both qualitatively and quantitatively.
30 citations
TL;DR: In this article, the authors investigated the field effect in planar-type Al/(100)SrTiO3/(001)YBa2Cu3Oy metal-insulator-superconductor field effect transistors (MISFETs) experimentally and theoretically.
Abstract: Planar-type Al/(100)SrTiO3/(001)YBa2Cu3Oy metal-insulator-superconductor field-effect transistors (MISFETs) were investigated experimentally and theoretically. The applied gate field induces the change of the carrier concentration in YBa2Cu3Oy channel (or conducting layer thickness), which in turn modulates the critical current Jc through the flux-creep model and flux-flow resistivity ρt through the Bardeen-Stephen model. Theoretical results explained, to a certain extent, the observed field effect in the MISFET semiquantitatively.
29 citations