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Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: It was found that H2 enhances electronic mobility and carrier density within the nanowires dramatically and the effect of H2 on the contact barriers was observed to be negligible compared to the other two effects.
Abstract: Field effect transistors have been fabricated using Bi2S3 nanowires. Whether the contact is ohmic or non-ohmic, the current of Bi2S3 nanowires was found to increase remarkably in H2 compared to that in a vacuum. Carrier density and mobility within the nanowires and the contact barriers between the nanowires and the electrodes have been extracted using field effect and two-probe current-voltage curves. It was found that H2 enhances electronic mobility and carrier density within the nanowires dramatically. The effect of H2 on the contact barriers was observed to be negligible compared to the other two effects.
27 citations
TL;DR: In this paper, the authors present results on the near-room temperature control of the magnetization of optimally doped La0.67Sr0.33MnO3 ultrathin films in vertical field effect devices, where they act as top or bottom electrodes.
Abstract: The control of the magnetization in ferromagnetic layers via electric fields is a hot topic in view of applications to the next generation of spintronic devices, where writing the magnetic information through current lines could be replaced by electric writing. Mixed valence manganites are good candidates for such a purpose because they present an intriguing coupling between ferromagnetism and charge ordering/doping which can be tuned by the application of an electric field. Here we present results on the near-room temperature control of the magnetization of optimally doped La0.67Sr0.33MnO3 ultrathin films in vertical field effect devices, where they act as top or bottom electrodes. In the latter case a slight decrease in the Curie temperature (∼5 K) is observed after application of 5×107 V/m, i.e., the maximum field preventing electric breakdown, compatible with the induced variation in the charge density and mixed valence within the Thomas Fermi screening length. These results indicate that electric fie...
27 citations
Patent•
18 Oct 1968TL;DR: In this paper, the authors proposed a method to prevent injected minority carriers from reaching the drain regions of the field effect transistors in capacitive memory circuits by means of suppressing the injection of minority carriers.
Abstract: Insulated gate-type field effect transistors used in capacitive memory circuits and having protective diodes for protecting the insulating films below the gate electrodes from electrical breakdown, in which parasitic transistor action which might be caused by minority carriers injected into semiconductor substrates by noise signals applied to the protective diodes are eliminated by means for suppressing the injection of minority carriers or by means for preventing injected minority carriers from reaching the drain regions of the field effect transistors.
27 citations
27 citations
TL;DR: In this article, the authors applied an electric field across the PMN-PT substrate whether the LSMO film is in the paramagnetic, ferromagnetic, or charge-ordered state.
Abstract: The authors have deposited thin films of La0.85Sr0.15MnO3 (LSMO) on 0.7Pb(Mg1∕3Nb2∕3)O3–0.3PbTiO3 (PMN-PT) single-crystal substrates and have achieved modulation of the resistance of the LSMO film by applying an electric field across the PMN-PT substrate whether the LSMO film is in the paramagnetic, ferromagnetic, or charge-ordered state. Piezoelectric measurements show that the electric field gives rise to a lattice strain in the PMN-PT substrate via the converse piezoelectric effect, which then induces a lattice strain and hence a resistance change in the LSMO film. Analysis of the data indicates that the electric-field-induced lattice strain effect dominates over the field effect in the LSMO/PMN-PT structure.
27 citations