Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the effects of free-carrier screening and valence band mixing on gain-switching characteristics of the field-effect quantum-well laser were studied theoretically.
Abstract: The effects of free‐carrier screening and valence band mixing on gain‐switching characteristics of the field‐effect quantum‐well laser are studied theoretically. Our analysis is based on the multiband effective mass theory and the density matrix formalism with the intraband relaxation taken into account. We calculate the electronic structure of the quantum well by solving simultaneously the multiband effective mass equations for the envelope functions with Poisson’s equation. It is found that the free‐carrier screening affects considerably both electronic properties (band structure and wave functions) and gain‐switching characteristics by reducing the electric field and charge separation in the quantum well when the gate field is applied across the quantum well.
26 citations
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TL;DR: In this paper, conductivity and its temperature dependence, conduction type, and field-effect mobility in metal-doped C60 thin films are investigated together with those of undoped films.
Abstract: Conductivity and its temperature dependence, conduction type, and field-effect mobility in metal (In or Sb)-doped C60 thin films are investigated together with those of undoped films. All electrical measurements have been conducted without exposure to air after deposition, in order to minimize the degradation of films due to incorporation of oxygen. For films with both dopants, (1) the conductivity is several orders of magnitude higher than that of undoped films, (2) the conductivity follows a semiconductor-like temperature dependence with the activation energy of 0.10-0.17 eV, which is much lower than that of the undoped films, 0.51 eV, (3) the conduction is n-type, and (4) the field-effect mobility is 0.03-0.04cm2/Vs. Enhancement of conductivity in metal-doped C60 films is attributed to the increase of both carrier concentration and mobility.
26 citations
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TL;DR: In this paper, the reliability of n-type SiC MOS devices was investigated by monitoring the gate-leakage current as a function of temperature, and they found current densities below 17 nA/cm2 and 3 nA /cm2 at electric field strengths up to 0.6 MV/cm and temperatures of 330°C and 180°C, respectively.
Abstract: Field-effect devices based on SiC metal-oxide-semiconductor (MOS) structures are attractive for electronic and sensing applications above 250°C. The MOS device operation in chemically corrosive, high-temperature environments places stringent demands on the stability of the insulating dielectric and the constituent interfaces within the structure. The primary mode of oxide breakdown under these conditions is attributed to electron injection from the substrate. The reliability of n-type SiC MOS devices was investigated by monitoring the gate-leakage current as a function of temperature. We find current densities below 17 nA/cm2 and 3 nA/cm2 at electric field strengths up to 0.6 MV/cm and temperatures of 330°C and 180°C, respectively. These are promising results for high-temperature operation, because the optimum bias point for SiC MOS gas sensors in near midgap, where the field across the oxide is small. Our results are valid for n-type SiC MOS sensors in general and have been observed in both the 4H and 6H polytypes.
26 citations
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TL;DR: In this article, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated using a vacuum thermal evaporation method with an SnO powder source.
Abstract: In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N 2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm 2V -1s -1 with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.
26 citations
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28 Feb 1989
TL;DR: In this paper, a gate electrode 30 sandwiches a gate insulating film 91, and surrounding a thin film semiconductor layer, a thin-film part which is not covered with a gate 30 is a source electrode 40 and a drain electrode 50; the thin-filtered portion which is sandwiched by the gate 30 between the electrodes 40, 50 constitutes a channel in the direction parallel with the surface of a substrate 10.
Abstract: PURPOSE: To obtain a semiconductor device having a thin film transistor(TFT) wherein integration density is high and electric characteristics are superior, by arranging a channel, at least a part of said channel, in a semiconductor layer almost vertical to a semiconductor layer, and making the direction of a current flowing in the channel nearly parallel with the substrate. CONSTITUTION: A gate electrode 30 sandwiches a gate insulating film 91, and surrounds a thin film semiconductor layer; a thin film part which is not covered with a gate 30 is a source electrode 40 and a drain electrode 50; the thin film semiconductor layer which is sandwiched by the gate 30 between the electrodes 40, 50 constitutes a channel in the direction parallel with the surface of a substrate 10. Since the channel is surrounded by an insulating layer 20 and the gate insulating film 91, the channel is electrically isolated from the substrate 10. The gate electrode 30 exerts field effect on the channel via a gate insulating film 91, and performs three-terminal field effect type transistor actions by a source electrode 40 and a drain electrode 50. Hence excellent electric characteristics can be obtained by the gate, and a finely miniaturized FET can be constituted in a plane view. COPYRIGHT: (C)1990,JPO&Japio
25 citations