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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


Papers
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Journal ArticleDOI
TL;DR: This work reports the direct observation of a long-range field effect in WTe_{2} devices, leading to large gate-induced changes of transport through crystals much thicker than the electrostatic screening length, and shows that the phenomenon is caused by the gate tuning of the bulk carrier mobility by changing the scattering at the surface.
Abstract: An unconventional long-range field effect in WTe${}_{2}$ is used to gate-tune the bulk properties of the material. This method could be used to gate-tune electronic properties deep in the interior of conducting materials, avoiding limitations imposed by electrostatic screening.

25 citations

Journal ArticleDOI
H. Sakaki1
TL;DR: Physical processes which govern the switching speed of heterostructure field-effect transistors, including high-electron mobility transistors as discussed by the authors, are discussed to show that the ultimate switching speed is of the order of one ps.
Abstract: Physical processes which govern the switching speed of heterostructure field-effect transistors, including high-electron mobility transistors, are discussed to show that the ultimate switching speed is of the order of one ps The importance of adopting new FET structures with higher current-drive capability is pointed out, including selectively-doped double-hetero structures and material systems other than GaAs-AlGaAs Possibilities of novel field-effect devices, such as velocity modulation transistors, quantum-well-wire FET's with extremely high electron mobilities, and field-effect 2-dimensional-electron-gas superlattices are also discussed The concept of wavefunction engineering in these devices is described

25 citations

Journal ArticleDOI
TL;DR: The graphdiyne-based field-effect thin-film transistor (GTFTs) with a clean, efficient, non-destructive, continuous and reversible modulation strategy have been developed for the first time and efficient electronic modulation utilizing light and heat results in a significant improvement of the GTFT performance.
Abstract: Graphdiyne-based field effect thin film transistors (GTFTs) with a clean, efficient, nondestructive, continuous, and reversible modulation strategy have been developed for the first time. We have determined that efficient electronic modulation utilizing light and heat results in a significant improvement in GTFT performance. Heat can increase the switching ratio of the device to 103, while light regulation can induce a higher switching ratio of >104 by efficient charge injection with an improved conductivity of 1.5 × 104 S/m. Via the adjustment of the visible light wavelength and power density, tunable charge injection has been realized. These results not only highlight the excellent intrinsic properties and modulation method of GTFTs but also promote the application of such films composed of two-dimensional graphdiyne material in integrated devices, such as logic devices and flexible devices.

25 citations

Patent
Shinichi Nakamura1
16 Sep 2004
TL;DR: In this paper, a field effect type organic transistor is provided which comprises a source electrode, a drain electrode, and a gate electrode, an organic semiconductor layer, and an optical anisotropic material.
Abstract: A field effect type organic transistor is provided which comprises a source electrode, a drain electrode, and a gate electrode, a gate insulating layer, and an organic semiconductor layer, wherein the gate insulating layer contains an optical anisotropic material having an anisotropic structure formed by light irradiation, and the organic semiconductor layer is in contact with the anisotropic structure.

25 citations

Patent
03 Jun 1974
TL;DR: An improved and simplified process for fabricating a complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate is presented in this paper.
Abstract: An improved and simplified process for fabricating a complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate wherein the source/drain regions of at least one of the complementary p-channel or n-channel field effect devices are formed by the steps of introducing an impurity of one conductivity type and then introducing an impurity of the opposite conductivity type, one of the impurities having a relatively greater concentration than the other so that the one impurity counterdopes the other and the source/drain regions are characterized by the conductivity type of the one impurity.

25 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133