Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells

Abstract: To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance. The same p–i–n InGaN structures were re-simulated with and without the piezoelectric field effect, as spontaneous polarization remained unchanged. The sample with the piezoelectric field effect showed higher short current density (), a staircase-like feature in its I–V curve, and higher open circuit voltage () with a lower fill factor (F.F.) and reduced conversion efficiency (C.E.) than the sample with no piezoelectric fields. In addition, with increasing In fraction (x), the value gradually increased while the value significantly decreased, correspondingly leading to a reduction in C.E. and F.F. values of the structure with the piezoelectric field effect. To solve the current loss problem, we applied various piezoelectric field elimination techniques to the simulated structures.

Field effect studies of the oxidized silicon surface

Abstract: Thermally grown silicon dioxide layers have been studied in some detail. The work function of the oxide is lower than the silicon work function; therefore, the induced channel is n -type. The interfacial traps appear to be negligible, and oxide traps control the charge distribution. Ionic and structural changes are studied by application of electric fields at different temperatures. The relaxation times allow determination of the activation energies and diffusivity of the mobile species. Finally, the effect of metal depositions are discussed.

Field effect and thermoelectric power on arsenic-doped amorphous silicon

Abstract: Field effect and thermoelectric power measurements have been made as a function of temperature on a series of As-doped amorphous silicon samples prepared by glow discharge decomposition of silane. At lower temperatures field effect screening is by localized states at the Fermi level, whereas at higher temperatures it is by mobile carriers in extended states. The density of localized states at the Fermi level increases as the As density increases, at least partially due to the creation of localized states by As donors. The density of surface states is less than or equal to 5 × 1011 cm−2 eV−1. Electrical transport is interpreted in a two-channel model, involving transport both in extended states and in a band of localized states lying above the Fermi level, the center of which shifts toward the extended states as the doping concentration increases.

Interface-mediated pairing in field effect devices

Abstract: We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.