Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this paper, the carrier injection mechanism of top-contact pentacene field effect transistors (FETs) was investigated in terms of Schottky injection, and the authors showed that injected holes contributed to carrier injection, while the external electric field was cancelled by the space charge field formed by holes accumulated in the FET channel.
Abstract: By probing optical second harmonic generation (SHG) signals enhanced around the injection electrode, the carrier injection mechanism of top-contact pentacene field-effect transistors (FETs) was investigated in terms of Schottky injection. At the Au source electrode, the SHG signal disappeared immediately after applying the driving voltage: the applied external electric field was cancelled by the space charge field formed by holes accumulated in the FET channel. At the Ag source electrode, the SH intensity decayed slowly. Its dependence on the device operation voltage suggested that the electric field was not relaxed by injected holes. The Schottky effect regulated carrier injection. The space charge field effect attributable to accumulated holes contributed to the carrier injection.
22 citations
08 Oct 2013
TL;DR: In this paper, the influence of conductivity on the electric field distribution in multi-dielectrics by experimental measurements and simulation is investigated, under the nonhomogeneous temperature conditions of the cable in service.
Abstract: One of the major issues to be considered for the development of polymeric-type DC cable systems is the accumulation of space charges and the consequent distortion of the electric field. These phenomena occur both in the cable and in the accessories, especially at interfaces between different materials. In this respect, accessories, like joints and terminations are key points for the reliability of DC links. They are made with polymeric materials of different nature, the respective dielectric properties having a significant impact on the field distribution and interfacial charge accumulation processes. Therefore, the design of such accessories requires accurate forecasting of the actual field distribution within the insulation, under the non-homogeneous temperature conditions of the cable in service. The aim of the present contribution is to investigate the influence of conductivity on the electric field distribution in multi-dielectrics by experimental measurements and simulation.
22 citations
TL;DR: In this article, a single monolayer pentacene-based field effect transistor with a high electrical performance was investigated, whose mobility reached as high as 0.31 cm2 V−1/s−1.
22 citations
TL;DR: In this article, a theoretical study of the threshold electric field of UCDW in a magnetic field is presented, which shows that the magnetic field-temperature phase diagram is very similar to those in a d-wave superconductor and the optical conductivity shows clear features characteristic to both UDW and magnetic field.
Abstract: Many experiments suggest that the unidentified low-temperature phase of α-(BEDT-TTF) 2 KHg(SCN) 4 is most likely unconventional charge density wave (UCDW). To further extend this identification we present our theoretical study of the threshold electric field of UCDW in a magnetic field. The magnetic field-temperature phase diagram is very similar to those in a d-wave superconductor. The optical conductivity shows clear features characteristic to both UDW and magnetic field. We find a rather strong field dependence of the threshold electric field, which shows qualitatively good agreement with the experimental data.
22 citations
TL;DR: High-quality mixed crystals with mixing-ratio-dependent lattice parameters and electronic structure are obtained by co-deposition of two organic molecules using the mixed films as the inducing layer in weak epitaxy growth and the mobility of VOPc transistors is finely tuned.
Abstract: High-quality mixed crystals with mixing-ratio-dependent lattice parameters and electronic structure are obtained by co-deposition of two organic molecules. Using the mixed films as the inducing layer in weak epitaxy growth, the mobility of VOPc transistors is finely tuned. This is possible because of the cooperative effect between the tunable lattice parameters and electronic structure.
22 citations