Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this paper, the structure and vibrational properties of the Si(100)-H(2×1) surface in an electric field were investigated and the results showed that inelastic scattering events with energy transfer nℏω, where n > 1, play an important role in the desorption process.
22 citations
TL;DR: In this article, a double-transduction principle for silicon nanowire resonators, which exploits the depletion charge modulation in a junctionless field effect transistor body and the piezoresistive modulation, is demonstrated.
Abstract: The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this paper, we demonstrate a novel double-transduction principle for silicon nanowire resonators, which exploits the depletion charge modulation in a junctionless field effect transistor body and the piezoresistive modulation. A mechanical resonance at the very high frequency of 100 MHz is detected in the drain current of the highly doped silicon wire with a cross-section down to ~ 30 nm. We show that the depletion charge modulation provides a ~ 35 dB increase in output signal-to-noise compared to the second-order piezoresistive detection, which can be separately investigated within the same device. The proposed junctionless resonator stands, therefore, as a unique and valuable tool for comparing the field effect and the piezoresistive modulation efficiency in the same structure, depending on size and doping. The experimental frequency stability of 10 ppm translates into an estimated mass detection noise floor of ~ 60 kDa at a few seconds integration time in high vacuum and at room temperature. Integrated with conventional semiconductor technology, this device offers new opportunities for NEMS-based sensor and signal processing systems hybridized with CMOS circuitry on a single chip.
22 citations
TL;DR: In this article, field-induced electron spin resonance (FI-ESR) measurements have been performed on metal-insulator-semiconductor diode structures using regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) composites with various mixing ratios on a parylene gate insulator.
22 citations
TL;DR: In this paper, a double-step chronocoulometry-based field effect technique was applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution.
22 citations
TL;DR: In this article, a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic gate material is used to detect typical exhaust gases (CO, NO, C3H6, H2, NH3).
Abstract: Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of gas analysis sensors FETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to FETs. A suitable temperature cycle for detection of typical exhaust gases (CO, NO, C3H6 , H2, NH3) was developed and combined with appropriate signal processing. The sensor data were evaluated using multivariate statistics, e.g., linear discriminant analysis. Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0, 10, and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.
22 citations