Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this paper, density functional theory simulations of HfO2∕SiO2 interfaces predict the presence of midgap states associated with nonbonding Hf d electrons which result from the reduced oxygen coordination of near-interface Hf ions.
Abstract: Density functional theory simulations of HfO2∕SiO2 interfaces predict the presence of midgap states associated with nonbonding Hf d electrons which result from the reduced oxygen coordination of near-interface Hf ions. These states are expected to be unoccupied in actual device structures, producing a high density of positive fixed charge during the operation of Si field effect devices containing high permittivity HfO2 dielectrics. Our results further demonstrate how the segregation of electronegative species to the HfO2∕SiO2 interface can remove gap states by accepting the nonbonding electrons.
22 citations
TL;DR: In this paper, a relationship between the surface conductivity and the ellipsometric parameter ψ at the optical transitions during oxygen adsorption was found for a coverage of 0.15 monolayer oxygen, at the same point Surnev detected a change of the elementary dipole moment.
21 citations
TL;DR: In this article, the chemical and electronic structure of solution-processed IZO thin films have been studied in detail with X-ray photoelectron spectroscopy (XPS) under systematic variation of Tpc and the concentration of the precursor solution.
Abstract: Solution-processed metal oxide semiconductors are of high interest for the preparation of high-mobility transparent metal oxide (TMO) semiconductor thin films and thin film transistors (TFTs). It has been shown that the charge transport properties of indium–zinc oxide (IZO) thin films from molecular precursor solutions depend strongly on the preparation conditions, in particular on the precursor conversion temperature Tpc and, to some surprise, also on the concentration of the precursor solution. Therefore, the chemical and the electronic structure of solution-processed IZO thin films have been studied in detail with X-ray photoelectron spectroscopy (XPS) under systematic variation of Tpc and the concentration of the precursor solution. A distinct spectral feature is observed in the valence band spectra close to the Fermi level at EB = 0.45 eV binding energy which correlates with the trends in the sheet resistivity, the field effect mobility μFE, and the optical gap Egopt from four-point-probe (4PP), TFT,...
21 citations
TL;DR: In this article, the authors investigated the charge transport properties of vapor-deposited thin organic films, using the Seebeck effect for determining conduction type and Fermi energy and the field effect to measure mobility and total charge carrier density.
Abstract: We have investigated the charge transport properties of vapor-deposited thin organic films, using the Seebeck effect for determining conduction type and Fermi energy and the field effect to measure mobility and total charge carrier density. We show that the combination of both techniques gives a complete picture of the electrical properties of the films.
21 citations
Patent•
22 Dec 2009
TL;DR: In this paper, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.
Abstract: In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.
21 citations