Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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01 Mar 1992-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, a voltage threshold is observed for the process which occurs up to at least 126 MHz, implying a time scale of −9 s. The process is related to an enhanced colloid production through an apparent increase in the F-centre production rate.
Abstract: Serious electrical degradation occurs in Al 2 O 3 when subjected to concurrent electron irradiation and an applied electric field The process is related to an enhanced colloid production through an apparent increase in the F-centre production rate A voltage threshold is observed for the process which occurs up to at least 126 MHz, implying a time scale of −9 s
21 citations
TL;DR: The resistivity of ultra-thin metal films is much higher than theoretically predicted by the scattering hypothesis and the effect of photoelectric and field effect measurements is discussed with respect to the variation of film thickness for copper films deposited under ultra-high vacuum conditions on glass substrates as mentioned in this paper.
Abstract: The resistivity of ultra-thin metal films is much higher than theoretically predicted by the scattering hypothesis. The effect is discussed with respect to the variation of film thickness for copper films deposited under ultra-high vacuum conditions on glass substrates. The interpretation on the basis of a statistical model leads to reasonable results even when the variation of temperature is included into consideration. Additional information is obtained from photoelectric and field effect measurements.
21 citations
21 citations
21 citations
TL;DR: In this paper, an analysis of current crowding and source contact resistance in top-contact organic thin-film transistors (OTFTs) is described and the dependence of the effective source length, over which significant current flows, on device structural parameters is investigated using 2D numerical simulations and a transmission-line-based analytical model is proposed.
Abstract: An analysis of current crowding and source contact resistance in top-contact organic thin-film transistors (OTFTs) is described. The dependence of the effective source length, over which significant current flows, on device structural parameters is investigated using 2D numerical simulations and a transmission-line-based analytical model is proposed which offers insight into the simulation results. An analytical expression for source resistance is derived which predicts that source resistance should decrease with increase in field effect mobility and gate–source voltage, and increase with semiconductor and insulator film thicknesses in agreement with reported experimental results.
21 citations