Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

A silicon carbide nanowire field effect transistor for DNA detection.

Abstract: This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor–liquid–solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μ m and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage ( I d – V d ) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

A prototype protein field-effect transistor

Abstract: Electrical conduction in a macroscopic assembly of apoferritin, a non-redox protein, has been characterized using a three-terminal prototype device. Our result shows an ohmic conduction near zero bias. The ohmic conduction can be controlled using an electric field applied to the protein assembly via the gate terminal of the device. The transconductance of the protein device shows a highly nonlinear dependence on the gate voltage. The transconductance curve indicates that the device has the attributes of an n-channel metal-oxide-semiconductor field-effect transistor with electrons as charge carriers. The input/output dynamic response of the device has been demonstrated.

Influence of gas molecules on the charge carrier mobility in thin films of semiconducting perylene tetracarboxylic imides

Abstract: Thin films (30nm) of crystalline N,N′-dimethylperylene-3,4,9,10-biscarboximide (MePTCDI) or amorphous 1,6,7,12-tetrachloro-N,N′-dimethylperylene-3,4,9,10-biscarboximide (Cl4MePTCDI) were prepared by physical vapor deposition and characterized by conductivity and field effect measurements at pristine films and under increasing partial pressure of oxygen, ethanol, acetone, or n-butane. Changes in the conductivity of the films were observed. Field effect measurements served to differentiate between changes in the charge carrier mobility μ and changes of the charge carrier concentration n. μ was found to decrease significantly, whereas rather small changes were found in n. Gas molecules that diffused into the films changed μ at least ten times more efficiently than those molecules just adsorbed on the surface.

Electronic properties of microcrystalline silicon prepared in the glow discharge plasma

Abstract: The paper briefly reviews the preparation and structure of glow discharge micro-crystalline Si and then deals in some detail with recent work on electronic properties. Conductivity, Hall effect and thermoelectric power measurements are discussed and it is concluded that crystalline semiconductor theory provides a consistent interpretation of the data. Field effect results confirm that in the microcrystalline phase the electron tail states of a-Si become de-localised.

Thin film transistors using PECVD-grown carbon nanotubes

Abstract: Thin film transistors with a carbon nanotube (CNT) network as a channel have been fabricated using grid-inserted plasma-enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of the CNTs with semiconducting behavior in the I–V characteristics of CNT field effect transistors (CNT-FETs). Taking advantage of the preferential growth and suppression of bundle formation, a large ON current of 170 µA mm − 1, which is among the largest in these kinds of devices with a large ON/OFF current ratio of about 105, has been realized in the relatively short channel length of 10 µm. The field effect mobility of the device was 5.8 cm2 V − 1 s − 1.