Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, a bottom gate, top contact organic field effect transistors (OFETs) were fabricated using copper phthalocyanine (CuPc) as an active layer.
20 citations
TL;DR: In this article, a dc electric field on an ionized isopropylacrylamide gel changes its volume and under appropriate conditions induces a phase transition, and the electric field stabilizes a shrunken phase, thus lowering the transition temperature.
Abstract: Application of a dc electric field on an ionized isopropylacrylamide gel changes its volume and under appropriate conditions induces a phase transition. The electric field stabilizes a shrunken phase, thus lowers the transition temperature. Various observations show that the field effect in gel is due to migration of ions. Under a relatively large field, gel not only shrinks but also swells so that a curious phenomena of oscillating volume change and oscillating phase transitions occur. Mechanisms of the field-induced volume change are considered qualitatively.
20 citations
TL;DR: In this paper, the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy was investigated to analyze the chemical interactions taking place, as well as the electrical performance of associated capacitor devices.
Abstract: InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large Dit response in electrical measurements.
20 citations
TL;DR: In this paper, a series of inverted-staggered (top contact) p-channel organic thin film transistors based on small molecule tetraphenyldibenzoperiflanthene (DBP) as an active layer have been fabricated by thermal evaporation at different substrate temperatures (300, 330, 360 and 390K).
20 citations
TL;DR: In this paper, the flow of current through undoped polysilicon is analyzed, where charge is assumed to be trapped in grain boundaries giving potential barriers across which the free electrons and holes pass.
20 citations