Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the photoresponse of ZnO in ultraviolet (UV) can be enhanced substantially by simultaneously applying a gate bias in an Electric Double Layer Field Effect Transistor configuration fabricated on ZnOs as a channel.
Abstract: We report that photoresponse of ZnO in ultraviolet (UV) can be enhanced substantially by simultaneously applying a gate bias in an Electric Double Layer Field Effect Transistor configuration fabricated on ZnO as a channel. The effect arises from synergy between UV illumination and applied gate bias, which leads to a substantial enhancement in the device current. We propose that large carrier density created by the illumination and the gate leads to neutralization of some of the oxygen charged vacancies which in turn reduce potential scattering leading to enhanced field effect mobility. This is verified by gate bias controlled Photo Luminescence experiment.
20 citations
TL;DR: In this paper, the electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated.
Abstract: Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and smooth/uniform surfaces are deposited by spin-coating. The In:Zn ratio is varied by adjusting the precursor compositions, and its influences on the electrical properties, such as resistivity, mobility, and threshold voltage, etc., of IZO films and TFTs are studied. The devices showed field effect mobility ranging from 0.07 to 2.13 cm2/Vmiddots with the In component (In/(In + Zn)) varying from 0.2 to 0.5.
20 citations
TL;DR: In this paper, the authors investigated the injection mechanism of top-contact pentacene field effect transistor (OFET) in respect to the internal field and the contact resistance was evaluated by the transmission line method for various applied external voltages.
20 citations
Patent•
27 Feb 1986TL;DR: A field effect semiconductor device which utilizes a two-dimensional electron gas is composed of a semi-insulating substrate (1 an i-type active layer (2), a superlattice structure layer which comprises a first I-type thin layer (3A), a thin layer doped with dopant by an atomic plane doping process, and a second i type thin layer(3C), these thin layers forming a quantum well; generally an n-type layer; and electrodes (6, 7, 8) for source, drain, and gate as discussed by the authors.
Abstract: A field effect semiconductor device which utilizes a two-dimensional electron gas is composed of a semi-insulating substrate (1 an i-type active layer (2); a superlattice structure layer which comprises a first i-type thin layer (3A), a thin layer (3B) doped with dopant by an atomic plane doping process, and a second i-type thin layer (3C), these thin layers forming a quantum well; generally an n-type layer; and electrodes (6, 7, 8) for source, drain, and gate
20 citations
01 Jun 1998-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the lifetime of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector, and the lifetime in high electric field (≥ 10 4 V/cm) of electrons was investigated with Schottky diodes.
Abstract: The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥ 10 4 V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2 + ) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0 ± 0.6) × 10 −14 cm 2 .
20 citations