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Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the third-harmonic generation coefficient for a laser-driven quantum dot with an on-center Gaussian impurity under static magnetic field is theoretically investigated, and the analytical expression of the THG coefficient is deduced from the compact density-matrix approach.
Abstract: The third-harmonic generation (THG) coefficient for a laser-driven quantum dot with an on-center Gaussian impurity under static magnetic field is theoretically investigated. Laser field effect is treated within the high-frequency Floquet approach and the analytical expression of the THG coefficient is deduced from the compact density-matrix approach. The numerical results demonstrate that the application of intense laser field causes substantial changes on the behavior of THG. In addition the position and magnitude of the resonant peak of THG coefficient is significantly affected by the magnetic field, quantum dot size and the characteristic parameters of the impurity potential.
19 citations
TL;DR: O1s and Mn2p near-edge X-ray absorption spectroscopy on La1-Sr1+xMnO4 (0 ≤x ≤05) single crystals was performed in this article.
Abstract: O1s and Mn2p near-edge X-ray absorption spectroscopy on La1-xSr1+xMnO4 (0 ≤x ≤05) single crystals shows that Sr doping does not only provide holes to the system but also induces a continuous transfer of electrons from out-of-plane d3z2-r2 to in-plane d3x2-r2/d3y2-r2 orbitals Furthermore, a non-vanishing electron occupation of in-plane dx2-y2 and out-of-plane d3z2-r2 orbitals is observed up to relatively high doping contents These findings demonstrate that the energy difference between all these orbital types has to be very small and manifest that the orbital degree of freedom is determined not just by crystal field effects but also by orbital coupling Moreover, the doping-dependent transfer of spectral weight observed in the current data identifies La1-xSr1+xMnO4 as a charge-transfer insulator
19 citations
TL;DR: In this paper, the half-metallicity of stanene nanoribbons is exploited to generate highly spin-polarized currents in tunnel-field-effect transistors.
Abstract: The appearance of half-metallicity, modulated by a transverse electric field, in stanene nanoribbons could be exploited to generate highly spin-polarized currents in tunnel-field-effect transistors. In particular, the sensitivity of interband tunneling to small modulations of stanene's band gap, its reduced dependence on temperature, and its robustness against the presence of defects, lead to calculations suggesting that one can obtain tunable, 98% spin-polarized current with a small applied voltage on the control electrode. The proposed device could be useful in exploring innovative concepts of spin injectors or filters, which are fundamental building blocks of spintronics.
19 citations
TL;DR: The theoretical phase diagrams of a magnetic lattice fluid in an external magnetic field are presented in this article, where it is shown that, depending on the strength of the nonmagnetic interaction between particles, various effects of the external field on the Ising fluid take place.
Abstract: The theoretical phase diagrams of a magnetic (Ising) lattice fluid in an external magnetic field are presented. It is shown that, depending on the strength of the nonmagnetic interaction between particles, various effects of the external field on the Ising fluid take place. In particular, at moderate values of the nonmagnetic attraction the field effect on the gas-liquid critical temperature is nonmonotonic. A justification of such behavior is given. If short-range correlations are taken into account (within a cluster approach), the Curie temperature also depends on the nonmagnetic interaction strength.
19 citations
TL;DR: In this article, the effect of varying the thickness of poly(3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) was studied.
Abstract: In this study, the conducting channel in poly(3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) was investigated. The effect of varying the P3HT layer thickness on the OFET parameters was studied. The threshold voltage and the field effect mobility were determined from both the linear and saturation regime of the OFET output characteristics for all film thicknesses and the results are compared and discussed. A gated four probe technique was used to investigate the formation and evolution of the conducting channel by monitoring changes in potential at different points in the channel during measurement. It was found that the device performance of the OFETs was significantly influenced by the thickness of the P3HT layer. Bulk currents were found to dominate device performance for thicker P3HT layers.
19 citations