Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this paper, a Graphene-Filed effect diode (G-FED) was proposed, where two gates are located over the channel and biased oppositively to electrically induce n or p regions in G-layer.
19 citations
TL;DR: In this paper, a single crystal of CeSi 1.86 was obtained and the electrical resistivity and the paramagnetic susceptibility were measured and both quantitities show Fermi-liquid behavior at low temperatures.
19 citations
TL;DR: In this article, the transport properties of F-doped boron nitride nanotubes (BNNTs) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by f-doping.
Abstract: The transport properties of F-doped boron nitride nanotube (BNNT) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by F-doping. The drain current was found to increase substantially with the applied negative gate voltage, suggesting these devices persist significant field effect with holes predominated; it also suggests that F-doping remarkably modified the band gap with F atoms preferred to be absorbed on B sites. Parameters, including the resistivity, charge concentration, and mobility, were further retrieved from the I-V curves. Our results indicate that device characterization is an effective method to reveal the specific properties of BNNTs.
19 citations
Patent•
09 Dec 2003TL;DR: In this article, a semiconductor integrated circuit including an LDMOS device structure comprises a semiconducting layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer.
Abstract: A semiconductor integrated circuit including an LDMOS device structure comprises a semiconductor layer with a pair of spaced-apart field effect gate structures over an upper surface of the semiconductor layer. First and second spaced-apart source regions of a first conductivity type are formed in a portion of the layer between the pair of gate structures with a first region of a second conductivity type formed there between. A lightly doped body region of a second conductivity type is formed in the semiconductor layer, extending from below the source regions to below the gate structures and extending a variable depth into the semiconductor layer. This body region is characterized by an inflection in depth in that portion of the body region extending below the first region.
19 citations
Patent•
09 Nov 1984TL;DR: In this paper, a very high speed, low power integrated interface circuit using GaAs or InP technology is provided for converting small digital voltage swings to larger swings which are particularly suitable for analog control signals.
Abstract: A very high speed, low power integrated interface circuit using GaAs or InP technology is provided for converting small digital voltage swings to larger swings which are particularly suitable for analog control signals. The preferred embodiments employ solely depletion mode MESFETS and Schottky diodes in Schottky diode field effect logic (SDFL) configurations.
19 citations