Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

Abstract: High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3(111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2-xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2-xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

Conduction and electric field effect in ultra-thin TiN films

Abstract: Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

Field-effect semiconductor device

Abstract: A field-effect semiconductor device including a through-hole electrode formed so as to penetrate from the top to the bottom of the semiconductor substrate, a dielectric film formed on the semiconductor substrate so as to be opposite to the through-hole electrode, and an electrode, forming a through-hole type of passive element, such as a capacitor, so as to improve the integration degree.

Back wall solar cell

Abstract: The application discloses a back-well cell, for example, a solar cell which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, one may employ a metallic layer to form a Schottky diode. If the metallic Schottky diode layer is used, no additional back contact is needed. A contact such as a gridded contact, pervious to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Geometrical study of nanoscale field effect diodes

Abstract: In this paper, the previously proposed side-contacted field effect diode (FED) is carefully studied and its characteristic is compared against that of a modified FED and a metal oxide semiconductor field effect transistor (MOSFET). The influences of the body thickness, each gate length and access resistance are investigated. The figures of merit including intrinsic gate delay time and energy-delay product, which represent the speed and switching energy of the device, respectively, are studied. Our results highlight that FEDs are good candidates for obtaining a high Ion/Ioff ratio with a relatively short delay time compared to conventional FEDs and MOSFETs. We show that by a careful scaling of the source‐drain region, the access resistance can be optimized. We demonstrate that a well-tempered device with a high switching response and a lower energy consumption can be achieved with a 30 nm body thickness, 85 nm source‐drain length and a drain gate length longer than the source gate length. (Some figures may appear in colour only in the online journal)