Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: This paper investigates effects of external electric field on the interfacial electronic structures via density functional theory (DFT) based first-principles calculations and predicts that the adsorption energy of atomic hydrogen on MoS2/Au to be readily controlled by electric field to a broad range within a modest magnitude of field, which may benefit the performance enhancement of hydrogen evolution reaction.
Abstract: Understanding the interfacial properties of catalyst/substrate is crucial for the design of high-performance catalyst for important chemical reactions. Recent years have witnessed a surge of research in utilizing MoS2 as a promising electro-catalyst for hydrogen production, and field effect has been employed to enhance the activity (Wang et al 2017 Adv. Mater. 29, 1604464; Yan et al 2017 Nano Lett. 17, 4109-15). However, the underlying atomic mechanism remains unclear. In this paper, by using the prototype MoS2/Au system as a probe, we investigate effects of external electric field on the interfacial electronic structures via density functional theory (DFT) based first-principles calculations. Our results reveal that although there is no covalent interaction between MoS2 overlayer and Au substrate, an applied electric field efficiently adjusts the charge transfer between MoS2 and Au, leading to tunable Schottky barrier type (n-type to p-type) and decrease of barrier height to facilitate charge injection. Furthermore, we predict that the adsorption energy of atomic hydrogen on MoS2/Au to be readily controlled by electric field to a broad range within a modest magnitude of field, which may benefit the performance enhancement of hydrogen evolution reaction. Our DFT results provide valuable insight into the experimental observations and pave the way for future understanding and control of catalysts in practice, such as those with vacancies, defects, edge states or synthesized nanostructures.
19 citations
TL;DR: The field effect surface-channel conductance and transconductance of both p-type and n-type Si inversion layers were measured as a function of external field and it was found that in most samples measured a combination of specular and diffuse scattering is involved.
Abstract: The field effect surface-channel conductance and transconductance of both p-type and n-type Si inversion layers were measured as a function of external field. In the small signal region, the channel conductance was found to vary logarithmically with the transverse field. The results are interpreted in terms of reduction of carrier mobility that is due to surface scattering. A model which consists of a uniformly distributed charge layer and self-consistent field is proposed to explain the observed results. It was found that in most samples measured a combination of specular and diffuse scattering is involved. Examples of completely diffuse scattering as well as the diffuse and specular combination are given. The temperature dependence of the surface mobility between 77° and 300°K is presented.
19 citations
TL;DR: In this article, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces, achieving charge concentrations of up to 5 × 1012 e cm−2.
Abstract: This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5 × 1012 e cm−2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide–silicon interface with SRV < 7 cm s−1, in 1 cm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.
19 citations
TL;DR: In this article, a boundary condition for the Ginzburg-Landau wave function at surfaces biased by a strong electric field is derived within the de Gennes approach, which provides a simple theory of the field effect on the critical temperature of superconducting layers.
Abstract: A boundary condition for the Ginzburg-Landau wave function at surfaces biased by a strong electric field is derived within the de Gennes approach. This condition provides a simple theory of the field effect on the critical temperature of superconducting layers.
18 citations
TL;DR: In this paper, a wide variety of different etch treatments and also the effect of depositing SiO 2 on the surface have been investigated, and it is found that the surface barrier always bends towards depletion or inversion.
18 citations