Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

Transparent thin film field effect type transistor using homologous thin film as active layer

Abstract: PROBLEM TO BE SOLVED: To solve the problem that in ZnO as a transparent oxide semiconductor, it is difficult to reduce an electric conductivity and it is impossible to constitute a normally off field effect type transistor, or as it is difficult to form an amorphous state, an amorphous transistor adaptive for a large area cannot be manufactured. SOLUTION: In a homologous compound InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) single crystal thin film manufactured by a reactive solid-phase epitaxial method, a deviation from a stoichiometry is very small and a good insulator is obtained near room temperatures. By using the homologous compound single crystal InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) thin film as an active layer, a transparent thin film field effect type transistor having a good switching characteristic can be manufactured by a normally off operation. COPYRIGHT: (C)2004,JPO

Electric field effect in ultrathin black phosphorus

Abstract: Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/Vs and drain current modulation of over 10$^3$. At low temperatures the on-off ratio exceeds 10$^5$ and the device exhibits both electron and hole conduction. Using atomic force microscopy we observe significant surface roughening of thin black phosphorus crystals over the course of 1 hour after exfoliation.

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

Abstract: The effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu substrate to an insulating (SiO2) substrate on the physical and electrical of the transferred graphene are studied X-ray photoelectron spectroscopy and atomic force microscopy show that this residue can be substantially reduced by annealing in vacuum The impact of the removal of poly(methyl methacrylate) residue on the electrical properties of graphene field effect devices is demonstrated, including a nearly 2 × increase in average mobility from 1400 to 2700 cm2/Vs The electrical results are compared with graphene doping measurements by Raman spectroscopy

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

Abstract: Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125−240 °C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 106 times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

Abstract: Recently we have reported the room temperature fabrication of transparent and flexible thin film transistors on a polyethylene terephthalate (PET) film substrate using an ionic amorphous oxide semiconductor (IAOS) in an In2O3–ZnO–Ga2O3 system. These transistors exhibit a field effect mobility of ∼10 cm2 (V s)−1, which is higher by an order of magnitude than those of hydrogenated amorphous Si and pentacene transistors. This article describes a chemical design concept of IAOS, and its unique electron transport properties, and electronic structure, by comparing them with those of conventional amorphous semiconductors. High potential of IAOS for flexible electronics is addressed.