Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: The calculation of the electron spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by the field effect.
Abstract: In this Letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers: a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electron spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by the field effect.
149 citations
TL;DR: In this article, an activation energy of 2.05 ev/atom was derived from the measured values of the time required to achieve a given degree of build-up at various operating temperatures.
Abstract: An activation energy for the surface migration of tungsten atoms on the tungsten crystal lattice structure and under the influence of a high electric field has been measured using field emission techniques. The initially hemispherical field emitter tip surface deforms into a polyhedral shape in a process known as build-up, when the emitter is heated in the presence of large electrostatic forces. Build-up proceeds in a regular and reproducible manner; certain stages of build-up can be identified by characteristic changes in both the field emission patterns and the current vs time characteristics of the emitter. An activation energy of 2.44\ifmmode\pm\else\textpm\fi{}0.05 ev/atom was determined, from the measured values of the time required to achieve a given degree of build-up at various operating temperatures. This value may be compared with the value of 3.14 ev/atom determined from the rate at which the tip of a heated tungsten emitter recedes in the absence of an electric field. Explanations for the difference are presented, involving two distinct factors: (1) a reduction in activation energy, through the effect of polarization of the surface atoms by the electrostatic field, by an amount which was determined in a special experiment; and (2) an inherent difference which remains after allowance has been made for the field effect. The latter is ascribed to the difference in the paths of migration in the two cases whereby, for the conditions existing in this experiment, the activation energy measured is that corresponding to migration primarily over the low index (100), (110), and (211) planes. A value of 2.79\ifmmode\pm\else\textpm\fi{}0.08 ev/atom is obtained after correction for the field effect.
147 citations
TL;DR: Hydrogen evolution reaction performance of MoS2 can be enhanced through electric-field-facilitated electron transport and the strategy of utilizing the electric field can be used in other semiconductor materials to improve their electrochemical catalysis for future relevant research.
Abstract: Hydrogen evolution reaction performance of MoS2 can be enhanced through electric-field-facilitated electron transport. The best catalytic performance of a MoS2 nanosheet can achieve an overpotential of 38 mV (100 mA cm-2 ) at gate voltage of 5 V, the strategy of utilizing the electric field can be used in other semiconductor materials to improve their electrochemical catalysis for future relevant research.
145 citations
TL;DR: In this paper, the authors have fabricated metal-insulator-semiconductor field effect transistors (MISFETs) from tetracyanoquinodimethane (TCNQ) doped with tetrathiofulvalene (TTF) and poly(β′-dodecyloxy(-α,α′−α′,α″-)terthienyl) (polyDOT3)doped with 2,3-dichloro-5,6-dicyano-1,4-benzo
143 citations
TL;DR: In this paper, the effect of alkyl side chain length on the molecular ordering and electrical properties of regioregular poly(3-alkylthiophene) (P3AT)-based field effect transistors (FETs) was investigated using P3ATs with various alkyal side chain lengths (n 2, n 3, n 4, 5, and 7) as active materials.
143 citations