Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

Maximizing Field-Effect Mobility and Solid-State Luminescence in Organic Semiconductors

Abstract: Conductive and emissive: organic transistors made from a simple styrylanthracene derivative have high charge mobility and high luminescence quantum yields. These properties are attributed to the lack of singlet fission, and challenge the idea that the efficient π interactions required for high mobility always lead to quenching of emission. The transistors emit blue electroluminescence and are stable during operation and storage.

Non-volatile switching in graphene field effect devices

Abstract: The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" to an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to non-volatile memories and novel neuromorphic processing concepts.

Organic metal electrodes for controlled p- and n-type carrier injections in organic field-effect transistors

Abstract: Fine control of p-, n-, and ambipolar-type field-effect transistor (FET) operations is successfully demonstrated in prototypical single-crystal organic FETs with use of chemically tunable nature of Fermi energy in tetrathiafulvalene-tetracyanoguinodimethane-based organic metal electrodes. Carrier-type preference and rectifying nature in the organic-organic contacts are revealed in terms of the FET operations as well as of the all-organic Schottky diode characteristics.

Full superconducting dome of strong Ising protection in gated monolayer WS2

Abstract: Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g., superconductor-semiconductor hybrid devices). Here we show that using field effect gating, we can induce superconductivity in monolayer WS2 grown by chemical vapor deposition, a typical ambient-stable semiconducting transition metal dichalcogenide (TMD), and we are able to access a complete set of competing electronic phases over an unprecedented doping range from band insulator, superconductor, to a reentrant insulator at high doping. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in the external magnetic field. The reentrant insulating state at positive high gating voltages is attributed to localization induced by the characteristically weak screening of the monolayer, providing insight into many dome-like superconducting phases observed in field-induced quasi-2D superconductors.

Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

Abstract: We demonstrate the realization and functioning of a hybrid (organic/silicon) nanometer-size field effect transistor (nano-FET) having a gate length of 25 nm. The gate insulator is an organic self-assembled monolayer (SAM) of alkyltrichlorosilanes (∼2 nm thick). We have used densely packed SAMs with functionalized end groups (–CH3, –CH=CH2, –COOH) that all exhibit reduced leakage current density (10−8–10−5 A/cm2). This nano-FET is free of punchthrough down to 50 nm, and shows a good field effect behavior at 25 nm. This demonstrates the compatibility of these SAMs with semiconductor device processes and their wide capability for applications in nanometer-scale electronics.