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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


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TL;DR: Powell et al. as discussed by the authors developed a general theory of the electronic relaxation of an S state complexed paramagnetic metal ion (Mn2+, Gd3+) in solution, which is strongly influenced by the static crystal field effect modulated by the random Brownian rotation of the complex.
Abstract: A general theory of the electronic relaxation of an S state complexed paramagnetic metal ion (Mn2+, Gd3+) in solution is developed. Contrarily to the usual assumption, the electronic relaxation is not only due to the effects of the transient zero field splitting, but is strongly influenced by the static crystal field effect which is modulated by the random Brownian rotation of the complex. The electron paramagnetic resonance measured linewidths of three Gd3+ (S=7/2) complexes at various temperatures and fields [D. H. Powell et al. J. Am. Chem. Soc. 118, 9333 (1996)] are well interpreted in the framework of this model and show the contributions of both mechanisms. The fitted crystal field parameters, the correlation times, and the activation energies are in good agreement with their expected values from the underlying processes. Moreover, our interpretation does not require the addition of any field independent contribution to the linewidth like the spin-rotation mechanism. The longitudinal relaxation function is well approximated using a single relaxation time, whereas the transverse relaxation function is a superposition of four decreasing exponentials.

92 citations

Journal ArticleDOI
TL;DR: In this paper, an n-type accumulation-mode field effect transistor based on BaSnO3 transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability, was fabricated.
Abstract: We fabricated an n-type accumulation-mode field effect transistor based on BaSnO3 transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn)2O3 as the source, drain, and gate electrodes, Al2O3 as the gate insulator, and La-doped BaSnO3 as the semiconducting channel. The Al2O3 gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8 cm2/Vs and the Ion/Ioff ratio value higher than 105 for VDS = 1 V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO3 on SrTiO3 substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al2O3 as well as the threading dislocations.

92 citations

Journal ArticleDOI
TL;DR: In this paper, it is shown that Mott's variable range hopping (VRH) yields a dependence between mobility and conductivity with the density of states of the hopping transport levels as parameter.

92 citations

Journal ArticleDOI
TL;DR: In this article, the free energy involved in the concentration fluctuations of a liquid mixture is changed by an electric field and the effect becomes observable near the critical point, and it increases with decreasing distance from the critical temperature and it is proportional to the square of the field intensity and to the second derivative of the dielectric constant.
Abstract: The free energy involved in the concentration fluctuations of a liquid mixture is changed by an electric field. The effect becomes observable near the critical point. It increases with decreasing distance from the critical temperature and it is proportional to the square of the field intensity and to the second derivative of the dielectric constant with respect to the concentration. Temperature as well as field strength dependence are in agreement with a theory built along classical lines. The effect can be interpreted as a shift of the critical temperature and the sign of this shift is also predicted correctly. Experiments performed with a field intensity of 45 000 V/cm on the system nitrobenzene‐2,2,4‐trimethylpentane give a value of 0.015° for this shift (which is a depression), while the theory predicts the same.

91 citations

Journal ArticleDOI
TL;DR: By carefully designing sequences of metallic, insulating, and semiconducting two-dimensional materials, a van der Waals heterostructure field effect device with WSe2 hosting quantum emitters that is responsive to external static electric field applied to the device is fabricated.
Abstract: The optical properties of atomically thin semiconductor materials have been widely studied because of the isolation of monolayer transition metal dichalcogenides (TMDCs). They have rich optoelectronic properties owing to their large direct bandgap, the interplay between the spin and the valley degree of freedom of charge carriers, and the recently discovered localized excitonic states giving rise to single photon emission. In this Letter, we study the quantum-confined Stark effect of these localized emitters present near the edges of monolayer tungsten diselenide (WSe2). By carefully designing sequences of metallic (graphene), insulating (hexagonal boron nitride), and semiconducting (WSe2) two-dimensional materials, we fabricate a van der Waals heterostructure field effect device with WSe2 hosting quantum emitters that is responsive to external static electric field applied to the device. A very efficient spectral tunability up to 21 meV is demonstrated. Further, evaluation of the spectral shift in the ph...

91 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133