Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.

A Field Effect Transitor based on the Mott Transition in a Molecular Layer

Abstract: Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.

Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon

Abstract: The field-effect conductance has been used in two distinct ways to determine the gap-state density in polycrystalline silicon. The relationship between the surface potential and the gate voltage, which determines the gap-state density, has been deduced according to the incremental method, already proposed by Suzuki et al., and a new method. The new method is based on the temperature dependence of the derivative of the field-effect conductance with respect to the gate voltage. The results from the two methods are in good agreement and show a rapidly increasing gap-state density in the upper half of the gap. The temperature analysis of the field-effect conductance indicates that the position of the Fermi level is temperature dependent. The contribution to this dependence from the statistical shift has been determined.

Phthalocyanato Tin(IV) Dichloride: An Air‐Stable, High‐Performance, n‐Type Organic Semiconductor with a High Field‐Effect Electron Mobility

Abstract: Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.

Nanocomposite field effect transistors based on zinc oxide/polymer blends

Abstract: The authors have examined the field effect behavior of nanocomposite field effect transistors containing ZnO (zinc oxide) tetrapods or nanocrystals dispersed in a polymer matrix of poly[2-methoxy,5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV). The electrical characteristics of ZnO tetrapods/MEH-PPV composite devices exhibit an increase in hole mobility up to three orders of magnitude higher than the polymer MEH-PPV device.

Correlating conductivity and space charge measurements in multi-dielectrics under various electrical and thermal stresses

Abstract: The design of transmission systems requires electric field distribution estimation, which, in case of HVDC application is strongly sensitive to thermal and electrical configuration as well as to the nature of dielectric materials being used owing to the resistive field distribution. In this paper, the field distribution in a dielectric bilayer of XLPE and rubber materials, as representative of cable junctions, is estimated based on experimental data on field and temperature dependencies of conductivity. Through space charge measurements on bi-layer dielectrics, it is shown that the space charge density and electric field distributions are to a first order estimation consistent with data issued from conductivity measurements. Most notably, the interface charge building up between the two dielectrics changes sign, depending on field and temperature. However, in the high field range (order of 20 kV/mm), charge build-up in the bulk of dielectric materials introduces further distortion to field distribution.