Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: In this article, the degradation of field effect transistors based on two-dimensional materials due to irradiation with heavy ions was investigated, and it was shown that the irradiation leads to significant changes of structural and electrical properties.
Abstract: We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U28+ ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 × 1011 ions/cm2, the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance.
85 citations
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TL;DR: Results show that typical quantum features such as energy-nonconserving transitions, intracollisional field effect, and multiple collisions change the very first transient of the system with respect to a semiclassical description.
Abstract: A new Monte Carlo method is presented for the evaluation of the density matrix from the solution of the Liouville\char21{}von Neumann equation for an ensemble of noninteracting electrons in a semiconductor crystal. The method is applied to the study of the electron transient response to a high external electric field in Si and to the relaxation of photoexcited electrons in GaAs in absence of external electric fields. The phonon population is always assumed at equilibrium, but no assumptions are made about the strength of the electron-phonon interaction. Results show that typical quantum features such as energy-nonconserving transitions, intracollisional field effect, and multiple collisions change the very first transient of the system with respect to a semiclassical description.
85 citations
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TL;DR: Lab-free electrical detection of DNA hybridization has been achieved using both MOS capacitors and Poly-Si TFTs and single base pair DNA mismatches can be detected with the technique.
85 citations
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TL;DR: In this paper, a series of experiments aimed at improving the performance of amorphous silicon field effect transistors has been carried out, and the dc and dynamic characteristics of the optimized devices are described.
Abstract: A series of experiments aimed at improving the performance of amorphous silicon field effect transistors has been carried out. The dc and dynamic characteristics of the optimised devices are described. Stable devices capable of ON-currents of the order of 100 μA with OFF-currents ≃10−11 A can be fabricated which could, in principle, be used to address more than 1000 lines of a liquid crystal display. The properties of the highly conducting ON-state channel have also been studied. The field effect mobility, 0.3 cm2 V−1 s−1 at room temperature, has an activation energy of 0.1 eV at the higher gate voltages. The possible reasons for the improvement in performance over earlier devices are discussed.
85 citations
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TL;DR: Field-effect transistors based on two-component self-assembled monolayers of conjugated and insulating molecules were prepared; the conductance through them can be varied by more than three orders of magnitude by changing the applied gate bias.
Abstract: Field-effect transistors based on two-component self-assembled monolayers of conjugated and insulating molecules were prepared; the conductance through them can be varied by more than three orders of magnitude by changing the applied gate bias. With very small ratios of conjugated to insulating molecules in the two-component monolayer, devices with only a few “electrically active” molecules can be achieved. At low temperatures, the peak channel conductance is quantized in units of 2e2/h (wheree is the electron charge and h is Planck9s constant). This behavior is indicative of transistor action in single molecules. On the basis of such single-molecule transistors, inverter circuits with gain are demonstrated.
85 citations