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Field effect

About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the contact properties of field effect transistors (FETs) based on single grains of the organic semiconductor sexithiophene (SIS) were studied.
Abstract: This paper presents a study of the contact properties of field effect transistors (FETs) based on single grains of the organic semiconductor sexithiophene (‘6T', Egap ∼ 2.3 eV). The FETs are constr...

77 citations

Journal ArticleDOI
TL;DR: In this paper, the authors have calculated the distribution function of conducting electrons in non-polar semiconductor by solving the well-known Bloch's integral equation to the second order approximation, taking account of the interaction of electrons with both acoustical and optical modes of lattice vibrations.
Abstract: Recently Ryder and Shockley have found experimentally that the electrical conduction in a pure germanium crystal shows the marked deviation from Ohm's law in the strong electric field. In order to clarify the mentioned phenomena along the usual theory of electrical conduction, we have calculated the distribution function of conducting electrons in non·polar semiconductor by solving the well-known Bloch's integral equation to the second order approximation, taking account of the interaction of electrons with both the acoustical and optical modes of lattice vibrations. As a result we have found that our theory may well interpret the general behaviour of this phenomenon qualitatively. Furthermore, we have discussed the effect of impurity ions upon the critical field strengrh.

77 citations

Journal ArticleDOI
TL;DR: Three-dimensional dielectric nanostructures have been analyzed using field ion microscopy to study the electric dc field penetration inside these structures and the field is proved to be screened within a few nanometers as theoretically calculated and experimentally proved using laser-assisted atom probe tomography (APT).
Abstract: Three-dimensional dielectric nanostructures have been analyzed using field ion microscopy (FIM) to study the electric dc field penetration inside these structures. The field is proved to be screened within a few nanometers as theoretically calculated taking into account the high-field impact ionization process. Moreover, the strong dc field of the order of 0.1 V/A at the surface inside a dielectric nanostructure modifies its band structure leading to a strong band gap shrinkage and thus to a strong metal-like optical absorption near the surface. This metal-like behavior was theoretically predicted using first-principle calculations and experimentally proved using laser-assisted atom probe tomography (APT). This work opens up interesting perspectives for the study of the performance of all field-effect nanodevices, such as nanotransistor or super capacitor, and for the understanding of the physical mechanisms of field evaporation of dielectric nanotips in APT.

77 citations

Journal ArticleDOI
01 Nov 2018-Small
TL;DR: A novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed, and the result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2 D-T MDs integrated circuits.
Abstract: Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS2 islands. Based on such continuous MoS2 films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V T ) and field effect mobility (μFE ) for hundreds of MoS2 FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μFE of 70 cm2 V-1 s-1 and subthreshold swing of about 150 mV dec-1 are extracted from these MoS2 FETs, which are comparable to the best top-gated MoS2 FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits.

77 citations

Patent
Ikuro Masuda1, Kazuo Kato1, Takao Sasayama1, Yoji Nishio1, Shigeo Kuboki1, Masahiro Iwamura1 
11 Jul 1983
TL;DR: In this article, a high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect transistors and bipolar transistors, and discharge means for discharging accumulated charges from these transistors when the field effect transistors are turned off.
Abstract: A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

77 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20235
202210
202171
202078
2019103
2018133