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Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: The results indicate that device characteristics of MoS2 can be substantially impacted by tuning the device electrostatics, and this can be accomplished by controlling the effectively active body thickness of theMoS2 FET employing intercalation and engineering of the effective barrier between individual MoS1 layers.
Abstract: MoS2 transistors have been electrically characterized and analyzed in terms of their vulnerability to short channel effects and their response to various environments. We find that the electrical performance of MoS2 flakes is governed by an unexpected dependence on the effective body thickness of the devices that in turn depends on the amount of intercalated water molecules that exist in the layered structure. In particular, a decrease in effective body thickness is observed in air compared to the “water-free” scenario. Moreover, we find that the doping stage of a MoS2 field-effect transistor (FET) is p-type despite the appearance of electron conduction, and the amount of p-doping is higher in air than in vacuum. Most importantly, our results indicate that device characteristics of MoS2 can be substantially impacted by tuning the device electrostatics. This can be accomplished by controlling the effectively active body thickness of the MoS2 FET employing intercalation and engineering of the effective barr...
74 citations
TL;DR: In this paper, the authors measured the displacement currents of a pentacene field effect transistor (FET) by measuring the hole injection from Au source and drain electrodes and found that the capacitance calculated from the observed displacement current is a good measure of the lateral spread of the injected carriers at organic/dielectric interfaces.
Abstract: We have investigated carrier injection characteristics of a pentacene field effect transistor (FET) by measuring the displacement currents of the device. Hole injection from Au source and drain electrodes was clearly observed at negative gate voltage. We found that the capacitance calculated from the observed displacement current is a good measure of the lateral spread of the injected carriers at organic/dielectric interfaces. This technique also gives the estimation of the total amount of the accumulated charges in the FET device by integrating the displacement current. The present results demonstrate that this method can successfully probe the behavior of the carriers in organic FETs(OFETs), which is crucial for elucidating the operating mechanism of the transistors. From the measurements of the C60 FET structure in the atmosphere, which shows no gate modulation, we revealed that this technique is also useful for failure analysis of OFETs.
72 citations
TL;DR: In this article, the influence of dip-coating speed and concentration of the polymer solution on the characteristics of field effect transistors (FETs) fabricated in the bottom-contact structure with regioregular poly(3-hexylthiophene) (RR-P3HT) as the active semiconducting material was reported.
72 citations
TL;DR: In this paper, the conduction channel of a single-crystal nanowires of the topological insulator Bi2Se3 can be used as the channel for a field effect transistor (FET), a basic circuit building block.
Abstract: Topological insulators are unique electronic materials with insulating interiors and robust metallic surfaces. Device applications exploiting their remarkable properties have so far been hampered by the difficulty to electrically tune the Fermi levels of both bulk and thin film samples. Here we show experimentally that single-crystal nanowires of the topological insulator Bi2Se3 can be used as the conduction channel in high-performance field effect transistor (FET), a basic circuit building block. Its current-voltage characteristics are superior to many of those reported for semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio, and well-saturated output current. The metallic electron transport at the surface with good FET effective mobility can be effectively separated from the conduction of bulk Bi2Se3 and adjusted by field effect at a small gate voltage. This opens up a suite of potential applications in nanoelectronics and spintronics.
72 citations
TL;DR: The transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping is reported, showing that at high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material.
Abstract: Understanding the doping mechanisms in the simplest superconducting copper oxide—the infinite-layer compound ACuO2 (where A is an alkaline earth metal)—is an excellent way of investigating the pairing mechanism in high-transition-temperature (high-Tc) superconductors more generally1,2,3,4. Gate-induced modulation of the carrier concentration5,6,7 to obtain superconductivity is a powerful means of achieving such understanding: it minimizes the effects of potential scattering by impurities, and of structural modifications arising from chemical dopants. Here we report the transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping. At high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material. Maximum values of Tc of 89 K and 34 K are observed respectively for hole- and electron-type doping of around 0.15 charge carriers per CuO2. We can explore the whole doping diagram of the CuO2 plane while changing only a single electric parameter, the gate voltage.
72 citations