Topic
Field effect
About: Field effect is a research topic. Over the lifetime, 4018 publications have been published within this topic receiving 92613 citations.
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TL;DR: A true ferro electric field effect-carrier density modulation in an underlying Ge(001) substrate is reported by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO3 grown by molecular beam epitaxy.
Abstract: The control of electrical charges through an electronic field is the basis of modern electronic devices such as the transistor. Here, the authors achieve charge density modulation through a ferroelectric field effect in germanium and barium titanate thin-film heterostructures.
69 citations
TL;DR: The structural and electrical properties of in-situ-grown lateral 2H/1T' MoTe2 homojunctions grown using flux-controlled phase engineering are investigated using atomic-resolution plan-view and cross-sectional transmission electron microscopy analyses, and it is shown that the round regions of near-single-crystalline 2H-MoTe2 grow out of a poly Crystalline 1T'-MoTe 2 matrix.
Abstract: The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in TMDC-based field effect transist...
69 citations
TL;DR: In this paper, the field effect in pentacene thin-film transistors was studied using bottom-contact devices with channel lengths below 10nm, and a pair of guarding electrodes as close as 20nm to the two sides of the channel was employed to suppress spreading current.
Abstract: The field effect in pentacene thin-film transistors was studied using bottom-contact devices with channel lengths below 10nm. To suppress spreading current in these devices, which have a small channel width-to-length (W-L) ratio, we employed a pair of guarding electrodes as close as 20nm to the two sides of the channel. The responses of these nanometer scale transistors exhibit good gate modulation. Mobilities of 0.046cm2∕Vs and on/off ratios of 97 were achieved in sub-10-nm transistors. We find that the device response is strongly influenced by the nature of the metal-semiconductor contact.
68 citations
TL;DR: The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers.
Abstract: High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers.
68 citations